Theoretical investigation of the structural and electronic properties of bilayer van der Waals heterostructure of Janus molybdenum di-chalcogenides - Effects of interlayer chalcogen pairing

被引:22
作者
Bahadursha, Naresh [1 ]
Tiwari, Aditya [1 ]
Chakraborty, Sudipta [2 ]
Kanungo, Sayan [1 ,3 ]
机构
[1] Birla Inst Technol & Sci Pilani, Elect & Elect Engn Dept, Hyderabad Campus, Hyderabad 500078, India
[2] Macquarie Univ, Sch Engn, Sydney, NSW 2109, Australia
[3] Birla Inst Technol & Sci Pilani, Mat Ctr Sustainable Energy & Environm, Hyderabad Campus, Hyderabad, India
关键词
First principal calculation; 2D materials; TMD; Janus; Van der Waals heterostructure; Janus vdW; TRANSITION; MOSSE;
D O I
10.1016/j.matchemphys.2023.127375
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This work presents a two-dimensional (2D) material system of van der Waals (vdW) bilayer heterostructures between Janus Molybdenum Di-chalcogenides, MoXY (X/=Y, X/Y--S, Se, Te). Subsequently, using first-principle calculations, the comparative structural and electronic properties of such bilayers are comprehensively inves-tigated. In this context, four distinct interlayer stacking orientations are identified for each Janus vdW bilayer, and the influence of interlayer chalcogen pair specifications on the electronic properties is emphasized. The structural stabilities are quantified in terms of cohesive energy and interlayer interaction energy, and the structural properties are assessed from the bond length, bond angle, interlayer distance, and Mulliken charge. Next, the electronic properties of Janus vdW bilayers are comprehensively studied from the energy band structures with their constituent monolayer as well as atomic orbital projections and the total density of states (TDOS) profiles. In this context, the energy band structure and TDOS profiles are systematically analyzed in correlation with interlayer chalcogen pair specifications. Finally, the electronic properties of Janus vdW bilayers are benchmarked against their natural homogenous bilayer counterparts.
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页数:16
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共 57 条
[1]   Van der Waals heterostructure of Janus transition metal dichalcogenides monolayers (WSSe-WX2 (X=S, Se)) [J].
Alrebdi, Tahani A. ;
Amin, B. .
CHEMICAL PHYSICS, 2021, 549
[2]   MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts [J].
Balaji, Yashwanth ;
Smets, Quentin ;
Szabo, Aron ;
Mascaro, Marco ;
Lin, Dennis ;
Asselberghs, Inge ;
Radu, Iuliana ;
Luisier, Mathieu ;
Groeseneken, Guido .
ADVANCED FUNCTIONAL MATERIALS, 2020, 30 (04)
[3]   Probing the Interlayer Exciton Physics in a MoS2/MoSe2/MoS2 van der Waals Heterostructure [J].
Baranowski, M. ;
Surrente, A. ;
Klopotowski, L. ;
Urban, J. M. ;
Zhang, N. ;
Maude, D. K. ;
Wiwatowski, K. ;
Mackowski, S. ;
Kung, Y. C. ;
Dumcenco, D. ;
Kis, A. ;
Plochocka, P. .
NANO LETTERS, 2017, 17 (10) :6360-6365
[4]   Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides [J].
Bhattacharyya, Swastibrata ;
Singh, Abhishek K. .
PHYSICAL REVIEW B, 2012, 86 (07)
[5]   A detailed comparative performance analysis of the Transition Metal Di-chalcogenides (TMDs) based strain sensors through experimental realisations and first principle calculations [J].
Bokka, Naveen ;
Adepu, Vivek ;
Tiwari, Aditya ;
Kanungo, Sayan ;
Sahatiya, Parikshit .
FLATCHEM, 2022, 32
[6]   REVISED MULLIKEN ELECTRONEGATIVES .2. APPLICATIONS AND LIMITATIONS [J].
BRATSCH, SG .
JOURNAL OF CHEMICAL EDUCATION, 1988, 65 (03) :223-227
[7]   Orbital analysis of electronic structure and phonon dispersion in MoS2, MoSe2, WS2, and WSe2 monolayers under strain [J].
Chang, Chung-Huai ;
Fan, Xiaofeng ;
Lin, Shi-Hsin ;
Kuo, Jer-Lai .
PHYSICAL REVIEW B, 2013, 88 (19)
[8]   Strain-mediated stability and electronic properties of WS2, Janus WSSe and WSe2 monolayers [J].
Chaurasiya, Rajneesh ;
Dixit, Ambesh ;
Pandey, Ravindra .
SUPERLATTICES AND MICROSTRUCTURES, 2018, 122 :268-279
[9]   Two-Dimensional WSe2/MoS2 p-n Heterojunction-Based Transparent Photovoltaic Cell and Its Performance Enhancement by Fluoropolymer Passivation [J].
Cho, Ah-Jin ;
Song, Min-Kyu ;
Kang, Dong-Won ;
Kwon, Jang-Yeon .
ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (42) :35972-35977
[10]   Recent development of two-dimensional transition metal dichalcogenides and their applications [J].
Choi, Wonbong ;
Choudhary, Nitin ;
Han, Gang Hee ;
Park, Juhong ;
Akinwande, Deji ;
Lee, Young Hee .
MATERIALS TODAY, 2017, 20 (03) :116-130