High-order exciton complexes induced by an interlayer carrier transfer in 2D van der Waals heterostructures

被引:2
作者
Sui, Yizhen [1 ]
Cheng, Xiangai [1 ]
Liu, Qirui [1 ]
Tang, Yuxiang [2 ]
Xu, Zhongjie [1 ]
Wei, Ke [2 ,3 ]
机构
[1] Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Peoples R China
[2] Natl Univ Def Technol, Coll Sci, Inst Quantum Sci & Technol, Changsha 410073, Peoples R China
[3] Natl Univ Def Technol, Coll Comp, State Key Lab High Performance Comp, Changsha 410073, Peoples R China
基金
中国国家自然科学基金;
关键词
BANDGAP RENORMALIZATION; OPTICAL-RESPONSE; FINE-STRUCTURE; POLARITONS; BIEXCITONS; GENERATION; DYNAMICS; STATES; MOS2; WS2;
D O I
10.1364/OL.507084
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
High -order correlated excitonic states, such as biexciton, charged biexciton, and polaron, hold a promising platform in contemporary quantum and nonlinear optics due to their large Bohr radii and thus strong nonlinear interactions. The recently found 2D TMDs further give such excitonic states additional valley properties, with bound state of excitons in opposite valleys in momentum spaces. Despite great efforts that have been made on emission properties of excitonic states, their absorption features, especially the ultrafast absorption dynamics, are rarely reported. Here, we reported the enhanced optical absorption of the high -order chargedexcitonic states in monolayer WS2, including singlet, triplet, and semidark trions (3 -particle state), and charged biexcitons (5 -particle state), by utilizing the interlayer charge transfer -induced photo -doping effect in the graphene-WS2 heterostructure. Depending on recombination rates of doping electrons, absorption intensities of charged complexes exhibit ultrafast decay dynamics, with lifetimes of several picoseconds. Due to many -body interaction, both increasing pump intensity and lattice temperature can broaden these fine excitonic absorption peaks and even reverse the shape of the transient absorption spectrum. (c) 2023 Optica Publishing Group
引用
收藏
页码:161 / 164
页数:4
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