Theoretical studies on phase stability, electronic, optical, mechanical and thermal properties of chalcopyrite semiconductors HgXN2 (X=Si, Ge and Sn): A comprehensive DFT analysis

被引:18
作者
Hossain, A. [1 ,2 ]
Ali, M. A. [1 ,2 ]
Uddin, M. M. [1 ,2 ]
Naqib, S. H. [2 ,3 ]
Hossain, M. M. [1 ,2 ]
机构
[1] Chittagong Univ Engn & Technol CUET, Dept Phys, Chattogram 4349, Bangladesh
[2] Chittagong Univ Engn & Technol CUET, Dept Phys, Adv Computat Mat Res Lab, Chattogram 4349, Bangladesh
[3] Univ Rajshahi, Dept Phys, Rajshahi 6205, Bangladesh
关键词
Chalcopyrite semiconductors; Electronic properties; Mechanical properties; Optical properties; Thermal properties; Density functional theory; DENSITY-FUNCTIONAL THEORY; ELASTIC PROPERTIES; CRYSTAL-STRUCTURE; SOLAR-CELLS; SE; PREDICTION; HARDNESS; GA; 1ST-PRINCIPLES; CONVERSION;
D O I
10.1016/j.mssp.2023.108092
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, the ground state physical properties of Hg-based chalcopyrite semiconductors, HgXN2 (X = Si, Ge and Sn), are investigated using the density functional theory (DFT), which is based on full potential linearized augmented plane wave (FP-LAPW) method. The structural, electronic, optical, mechanical and thermal properties of the body-centered tetragonal (BTC) phase, HgXN2 (X = Si, Ge and Sn), have been calculated using the modified Becke-Johnson exchange-correlation potential (TB-mBJ). The obtained lattice parameters and volume are in good agreement with the values reported earlier, indicating that the results are reliable and reproducible. The phase stability of the titled compounds is elaborately studied and it is confirmed that all are thermodynamically, dynamically and mechanically stable. The electronic band structure demonstrated a direct band gap of 1.70 eV, 0.99 eV, and 0.94 eV for the HgXN2 (X = Si, Ge and Sn) compounds, respectively. Both HgGeN2 and HgSnN2 compounds have a notably lighter carrier effective mass, resulting in higher carrier mobility and conductivity than HgSiN2. The order of the mechanical hardness is as follows: HgSiN2> HgGeN2> HgSnN2. The studied materials are also anisotropic in mechanically and optically. All the title compounds exhibit ductile behavior. The charge density contour plots indicates the dominant covalent nature of the bonds in HgXN2 (X = Si, Ge and Sn). All these compounds have a high absorption coefficient and low optical reflectivity in the visible light range. Due to the favorable band gap and high absorption coefficient, these compounds could be suitable for optoelectronic or photovoltaic device applications. Moreover, the thermal expansion coefficient, thermal conductivity, melting point and fracture toughness behavior have been calculated, which also showed promise for thermal barrier coating (TBC) applications.
引用
收藏
页数:15
相关论文
共 81 条
[1]  
Adachi S., 2009, Wiley Series in Materials for Electronic Optoelectronic Applications
[2]   SOME ASPECTS OF REACTIONS BETWEEN AMMONIA AND MERCURY(I) COMPOUNDS [J].
ARORA, SD ;
LIPSCOMB, WN ;
SNEED, MC .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1951, 73 (03) :1015-1018
[3]   Structural, electronic, optical, vibrational and transport properties of CuBX2 (X = S, Se, Te) chalcopyrites [J].
Bagci, S. ;
Yalcin, Battal G. ;
Aliabad, H. A. Rahnamaye ;
Duman, S. ;
Salmankurt, B. .
RSC ADVANCES, 2016, 6 (64) :59527-59540
[4]   Phonons and related crystal properties from density-functional perturbation theory [J].
Baroni, S ;
de Gironcoli, S ;
Dal Corso, A ;
Giannozzi, P .
REVIEWS OF MODERN PHYSICS, 2001, 73 (02) :515-562
[5]   SIMULATION OF ELECTRONIC STRUCTURES OF Hg-IV-V2COMPOUNDS [J].
Basalaev, Yu M. ;
Basalaeva, M. Yu .
JOURNAL OF STRUCTURAL CHEMISTRY, 2020, 61 (07) :1007-1016
[6]   A simple effective potential for exchange [J].
Becke, Axel D. ;
Johnson, Erin R. .
JOURNAL OF CHEMICAL PHYSICS, 2006, 124 (22)
[7]  
Bell C.F., 1972, Modern Approach to Inorganic Chemistry, V3
[8]   WIEN2k: An APW+lo program for calculating the properties of solids [J].
Blaha, Peter ;
Schwarz, Karlheinz ;
Tran, Fabien ;
Laskowski, Robert ;
Madsen, Georg K. H. ;
Marks, Laurence D. .
JOURNAL OF CHEMICAL PHYSICS, 2020, 152 (07)
[9]   GIBBS:: isothermal-isobaric thermodynamics of solids from energy curves using a quasi-harmonic Debye model [J].
Blanco, MA ;
Francisco, E ;
Luaña, V .
COMPUTER PHYSICS COMMUNICATIONS, 2004, 158 (01) :57-72
[10]   On the stability of crystal lattices. I [J].
Born, M .
PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1940, 36 :160-172