A comparative study of noise performance for InP HEMT

被引：2

作者：

Zhang, Ao ^{[1
]}

Gao, Jianjun ^{[2
]}

机构：

[1] Nantong Univ, Sch Transportat & Civil Engn, Nantong 226019, Peoples R China

[2] East China Normal Univ, Sch Phys & Elect Sci, Shanghai, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2023年 / 210卷

基金：

中国国家自然科学基金;

关键词：

HEMT; Noise model; Parameter extraction; PARAMETER DETERMINATION;

D O I：

10.1016/j.sse.2023.108803

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comparative study to determine the scaling rules of noise model parameters for InP HEMT devices between 90 nm and 70 nm process is proposed in this paper. The expressions of noise model parameters in terms of four noise parameters are also derived. Both gate length and gate width scalable rules of the gate and drain noise model parameters (P and R) are discussed between 90 nm and 70 nm devices. Good agreement is obtained based on the comparison of measured and modeled noise parameters up to 45 GHz.

引用

页数：7

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