Superior energy storage properties with thermal stability in lead-free ceramics by constructing an antiferroelectric/relaxor-antiferroelectric crossover

被引:22
作者
He, Liqiang [1 ,2 ]
Yang, Yang [2 ]
Liu, Chang [2 ]
Ji, Yuanchao [1 ,2 ]
Lou, Xiaojie [2 ]
Zhang, Lixue [1 ,2 ]
Ren, Xiaobing [1 ,2 ,3 ]
机构
[1] Xi An Jiao Tong Univ, Frontier Inst Sci & Technol, Xian 710049, Peoples R China
[2] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
[3] Natl Inst Mat Sci, Ctr Funct Mat, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
Antiferroelectric ceramics; Crossover; Silver niobate; Energy storage; Thermal stability; PHASE-TRANSITIONS; HIGH-EFFICIENCY; DENSITY; AGNBO3; PERFORMANCE; LA; TEMPERATURE; CAPACITORS;
D O I
10.1016/j.actamat.2023.118826
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Fast development of electrostatic capacitors requires dielectric materials to perform large energy storage den-sities with high efficiency over a wide temperature range. Although antiferroelectric materials hold great po-tentials for achieving superior energy storage effect due to the field-induced antiferroelectric-ferroelectric transition, the strongly first-order transition is inevitably accompanied with a low energy storage efficiency and inferior thermal stability. Here, we found that a high polarization change and low hysteresis can be simulta-neously achieved in a crossover composition between antiferroelectric and relaxor antiferroelectric states. As a result, a large recoverable energy storage density (Wrec -8.6 J/cm3) with high efficiency (eta -85%) is obtained in lead-free Ag1-3xLaxNb0.9Ta0.1O3 (x=0.03) ceramics under 460 kV/cm. The x=0.03 ceramics also exhibit excellent energy storage properties (Wrec > 6.8 J/cm3 with ultrahigh eta -90%) in the temperature range of 20-120 degrees C. This promising energy storage effect of the antiferroelectric crossover composition arises from the coexistence of micro-and nano-antiferroelectric domains, which can persist over a wide temperature range. Our work may push forward the development of high-performance lead-free antiferroelectric dielectrics for energy storage devices.
引用
收藏
页数:8
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