Synthesis and crystal growth of novel layered bismuthides ATM2Bi2 (A=K, Rb, Cs; TM=Zn, Cd), electron-deficient compounds with the ThCr2Si2 structure

被引:4
作者
Shilov, Andrey I. [1 ,2 ]
Pervakov, Kirill S. [2 ]
Lyssenko, Konstantin A. [1 ,3 ]
Vlasenko, Vladimir A. [2 ]
Efremov, Dmitri V. [4 ]
Aswartham, Saicharan [4 ]
Simonov, Sergey V. [5 ]
Morozov, Igor V. [1 ]
Shevelkov, Andrei V. [1 ]
机构
[1] Lomonosov Moscow State Univ, Dept Chem, Moscow 119991, Russia
[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
[3] Natl Res Univ, Higher Sch Econ, Myasnitskaya Str 20, Moscow 101000, Russia
[4] Leibniz Inst Solid State & Mat Res IFW Dresden, D-01069 Dresden, Germany
[5] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow oblast, Russia
来源
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE | 2023年 / 649卷 / 6-7期
关键词
ternary bismuthides; crystal growth; crystal structure; SR; SB; BI;
D O I
10.1002/zaac.202200298
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
We report crystal growth and characterization of 4 new ternary layered bismuthides with compositions KZn2Bi2 (I), RbZn2Bi2 (II), RbCd2Bi2 (III), and CsCd2Bi2 (IV) that belong to the vast 122 family of compounds. Single crystals were grown by self-flux technique and characterized by a combination of powder X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and single crystal X-ray diffraction. All new compounds crystallize in the layered ThCr2Si2 structure type and exhibit the plate-like morphology with weak bonding between layers. A significant structural difference between ACd(2)Bi(2) and AZn(2)Bi(2) is found and discussed.
引用
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页数:8
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