Isothermal annealing of radiation defects in silicon bulk material of diodes from 8'' silicon wafers

被引：0

作者：

Kieseler, Jan ^{[1
,2
]}

de Almeida, Pedro Goncalo Dias ^{[1
,3
]}

Kaluzinska, Oliwia Agnieszka ^{[1
,4
,5
]}

Muhlnikel, Marie Christin ^{[1
,6
]}

Diehl, Leena ^{[1
]}

Sicking, Eva ^{[1
]}

Zehetner, Philipp ^{[1
,7
]}

机构：

[1] CERN, Expt Phys Dept, Espl Particules 1, Geneva, Switzerland

[2] Karlsruhe Inst Technol, ETP, Karlsruhe, Germany

[3] Inst Fis Cantabria CSIC UC, Santander, Spain

[4] Karlsruhe Inst Technol, ETIT, Karlsruhe, Germany

[5] Wroclaw Univ Sci & Technol, Fac Elect Photon & Microsyst WEFIM, 27 Wybrzeze Wyspianskiego, Wroclaw, Poland

[6] Heidelberg Univ, Kirchhoff Inst Phys, Neuenheimer Feld 227, Heidelberg, Germany

[7] Ludwig Maximilians Univ Munchen, Fac Phys, Geschwister Scholl Pl 1, Munich, Germany

来源：

JOURNAL OF INSTRUMENTATION | 2023年 / 18卷 / 09期

关键词：

Radiation-hard detectors; Si microstrip and pad detectors; CHARGE COLLECTION; DETECTORS; VOLTAGE; DAMAGE;

D O I：

10.1088/1748-0221/18/09/P09010

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In this paper, we study the radiation induced damage and its macroscopic isothermal annealing behaviour of the bulk material from new 8'' silicon wafers using diode test structures. The sensor properties are determined through measurements of the diode capacitance and leakage current for three thicknesses, two material types, and neutron fluences from 6.5 center dot 10(14) to 1 center dot 10(16) neq/cm(2).

引用

页数：19

共 47 条

[21] Results on radiation hardness of black silicon induced junction photodetectors from proton and electron radiation
Heinonen, J.
Modanese, C.
Haarahiltunen, A.
Kettunen, H.
Rossi, M.
Jaatinen, J.
Juntunen, M. A.
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[22] Radiation Effects on Silicon Carbide Junction Barrier Schottky Diodes Caused by High Energy Proton
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Yu, Qingkui
Wang, He
Sun, Yi
Lv, He
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Li, Pengwei
Zhang, Hongwei
Tang, Min
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[23] Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium
Londos, C. A.
Andrianakis, A.
Emtsev, V. V.
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[24] Radiation-induced interstitial carbon atom in silicon: Effect of charge state on annealing characteristics
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Markevich, Vladimir P.
Peaker, Anthony R.
Yakushevich, Hanna S.
Korshunov, Fedor P.
Murin, Leonid I.
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[25] Influence of surface damage and bulk defects on the interstrip isolation of p-type silicon strip sensors
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[26] Characterization of radiation-related damage in bulk-grown silicon-germanium detectors
Yaroslavski, I.
Ruzin, A.
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[27] Can the electric field in radiation-damaged silicon pad diodes be determined by admittance and current measurements?
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Kozhemiako, A., V
Kargina, Yu, V
Balakshin, Yu, V
Zvereva, E. A.
Chernysh, V. S.
Gongalsky, M. B.
Shemukhin, A. A.
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[29] Effects of radiation-induced defects on the charge collection efficiency of a silicon carbide particle detector
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