Nanoscale Cathodoluminescence and Conductive Mode Scanning Electron Microscopy of van der Waals Heterostructures

被引:7
作者
Ramsden, Hugh [1 ,2 ]
Sarkar, Soumya [1 ]
Wang, Yan [1 ]
Zhu, Yiru [1 ]
Kerfoot, James [2 ]
Alexeev, Evgeny M. [2 ]
Taniguchi, Takashi [3 ]
Watanabe, Kenji [4 ]
Tongay, Sefaattin [5 ]
Ferrari, Andrea C. [2 ]
Chhowalla, Manish [1 ]
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS, England
[2] Univ Cambridge, Cambridge Graphene Ctr, Cambridge CB3 0FA, England
[3] Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan
[4] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, 1-1 Namiki, Tsukuba 3050044, Japan
[5] Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA
基金
英国工程与自然科学研究理事会; 欧洲研究理事会;
关键词
layered materials; cathodoluminescence; nanoscale; scanning electron microscopy; transition metal dichalcogenides; van der Waals heterostructures; LIGHT-EMITTING-DIODES; SINGLE-CRYSTALS; BORON-NITRIDE; MONOLAYER; GRAPHENE; RESISTANCE; MOBILITY;
D O I
10.1021/acsnano.3c03261
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
van der Waals heterostructures (vdW-HSs) integrate dissimilarmaterialsto form complex devices. These rely on the manipulation of chargesat multiple interfaces. However, at present, submicrometer variationsin strain, doping, or electrical breakages may exist undetected withina device, adversely affecting macroscale performance. Here, we useconductive mode and cathodoluminescence scanning electron microscopy(CM-SEM and SEM-CL) to investigate these phenomena. As a model system,we use a monolayer WSe2 (1L-WSe2) encapsulatedin hexagonal boron nitride (hBN). CM-SEM allows for quantificationof the flow of electrons during the SEM measurements. During electronirradiation at 5 keV, up to 70% of beam electrons are deposited intothe vdW-HS and can subsequently migrate to the 1L-WSe2.This accumulation of charge leads to dynamic doping of 1L-WSe2, reducing its CL efficiency by up to 30% over 30 s. By providinga path for excess electrons to leave the sample, near full restorationof the initial CL signal can be achieved. These results indicate thatthe trapping of charges in vdW-HSs during electron irradiation mustbe considered, in order to obtain and maintain optimal performanceof vdW-HS devices during processes such as e-beam lithography or SEM.Thus, CM-SEM and SEM-CL form a toolkit through which nanoscale characterizationof vdW-HS devices can be performed, allowing electrical and opticalproperties to be correlated.
引用
收藏
页码:11882 / 11891
页数:10
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