Optical conductivity of gapped α-T3 materials with a deformed flat band

被引:13
作者
Iurov, Andrii [1 ]
Zhemchuzhna, Liubov [1 ,2 ]
Gumbs, Godfrey [2 ,3 ]
Huang, Danhong [4 ]
机构
[1] CUNY Medgar Evers Coll, Dept Phys & Comp Sci, Brooklyn, NY 11225 USA
[2] CUNY Hunter Coll, Dept Phys & Astron, 695 Pk Ave, New York, NY 10065 USA
[3] Donostia Int Phys Ctr DIPC, P Manuel Lardizabal 4, San Sebastian 20018, Basque Country, Spain
[4] US Air Force, Space Vehicles Directorate, Res Lab, Kirtland AFB, NM 87117 USA
关键词
SUPERCONDUCTIVITY; GRAPHENE;
D O I
10.1103/PhysRevB.107.195137
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We derive and discuss the optical conductivity of alpha-T3 materials with a finite band gap in their energy dispersions. In contrast with familiar alpha-T3 materials, this constitutes a nontrivial case since the flat band changes into a curved one and two other branch dispersion relations become nonlinear beyond the limiting cases for graphene and the dice lattice. Such a unique band structure appears if the alpha-T3 material is irradiated by a circularly polarized light nonresonantly. For this system, we have obtained optical conductivities at either zero or finite temperatures with nonzero or near-zero doping. Additionally, we demonstrate that analytical expressions can be obtained for all types of gapped alpha-T3 materials, and, meanwhile, provide closed-form analytical expressions for a gapped dice lattice. Our current paper reproduces known properties of optical conductivity in unirradiated alpha-T3 materials and silicene with two nonequivalent band gaps and, furthermore, demonstrates some very interesting irradiation-enabled behaviors which are absent in any Dirac materials. The discovery of unusual properties for the optical conductivity of gapped alpha-T3 in this paper is expected to have many promising device applications, such as photodetectors, optical modulators, and metasurfaces.
引用
收藏
页数:14
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