Uniaxial Strain Tuning of Upconversion Photoluminescence in Monolayer WSe2

被引:1
作者
Roy, Shrawan [1 ]
Yang, Xiaodong [1 ]
Gao, Jie [2 ]
机构
[1] Missouri Univ Sci & Technol, Dept Mech & Aerosp Engn, Rolla, MO 65409 USA
[2] SUNY Stony Brook, Dept Mech Engn, Stony Brook, NY 11794 USA
来源
ADVANCED PHOTONICS RESEARCH | 2024年 / 5卷 / 04期
关键词
1L-WSe2; uniaxial strains; upconversion photoluminescence; LIGHT-EMISSION; MODULATION; TRANSITION; HETEROSTRUCTURES; SEMICONDUCTORS; ENHANCEMENT; TRIONS; MOSE2;
D O I
10.1002/adpr.202300220
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Strain engineering is one of the leading mechanical ways to tune the optical properties of monolayer transition metal dichalcogenides among different techniques. Here, uniaxial strain is applied on exfoliated 1L-WSe2 flakes transferred on flexible polycarbonate substrates to study the strain tuning of upconversion photoluminescence. It is demonstrated that the peak position of upconversion photoluminescence is redshifted by around 20 nm as the applied uniaxial strain increases from 0% to 1.17%, while the intensity of upconversion photoluminescence increases exponentially for the upconversion energy difference ranging from -155 to -32 meV. The linear and sublinear power dependence of upconversion photoluminescence is observed for different excitation wavelengths with and without uniaxial strain, suggesting the multiphonon-assisted mechanism in one-photon regime for the upconversion process. These results offer the potential to advance 2D material-based optical upconversion applications in night vision, strain-tunable infrared detection, and flexible optoelectronics.
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页数:6
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