Power Module Design for GaN Transistors Enabling High Switching Speed in Multi-Kilowatt Applications

The advantages of gallium nitride and silicon carbide transistors over silicon devices are highlighted. The design criteria for power modules in multi-kilowatt applications to effectively leverage these advantages are described. Various concepts to overcome limitations associated with state-of-the-art power module packaging presented in the literature are summarized and evaluated. A novel power module design comprising a 650 V, 300 A half-bridge with integrated direct current-link and gate drivers is proposed. The results of a finite-element analysis of its parasitic elements and subsequent double-pulse test simulation are presented.