A 28 GHz 8 x 8 Gapwaveguide Phased Array Employing GaN Front-End With 60 dBm EIRP

被引:10
|
作者
Bagheri, Alireza [1 ,2 ]
Bencivenni, Carlo [1 ]
Gustafsson, Magnus [1 ]
Glazunov, Andres Alayon [2 ]
机构
[1] Gapwaves AB, S-41263 Gothenburg, Sweden
[2] Univ Twente, Dept Elect Engn, NL-7522 NB Enschede, Netherlands
关键词
28; GHz; fifth-generation (5G); gallium nitride (GaN); gapwaveguide (GW)-based antennas; millimeter-wave (mmWave); phased array; 5G APPLICATIONS;
D O I
10.1109/TAP.2023.3240837
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A cost-efficient, high equivalent isotropic radiated power (60 dBm), large-bandwidth (26.5-29.5 GHz) active phased array antenna system has been designed and experimentally verified. The proposed design methodology results in a reduction of production costs by employing gallium nitride (GaN)-based radio frequency front-ends (RFFEs) with 31 dBm output power allowing a reduced number of antenna elements. A fully metallic gapwaveguide (GW) technology has been employed achieving efficient heat dissipation per aperture area of the array as well as low-loss easy-to-manufacture antenna elements. The phased array is realized by sub-arraying an 8 x 8 slot array antenna with horizontal polarization. A +/- 60 degrees analog beamforming in the E-plane is demonstrated. The presented antenna is a potential candidate for compact-size high-performance fifth-generation (5G) base station antennas with excellent temperature stability.
引用
收藏
页码:4510 / 4515
页数:6
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