Piezoelectric response enhancement of w-AlN by Hf (or Zr) and Sc co-alloying: A first principles study

被引:5
作者
Wang, Fengqi [1 ]
Ye, Qinyan [1 ]
He, Xulin [1 ]
Luo, Kun [1 ]
Ran, Xiaolong [1 ]
Zheng, Xingping [1 ]
Liao, Cheng [1 ]
Li, Ru [2 ]
机构
[1] Chengdu Dev Ctr Sci & Technol CAEP, Chengdu 610299, Peoples R China
[2] Chongqing Univ, Coll Optoelect Engn, Key Lab Optoelect Technol & Syst, Minist Educ, Chongqing 400044, Peoples R China
关键词
First-principles calculations; Aluminum nitride; Piezoelectric properties; Mechanical properties; Bond geometry; Band structure; THIN-FILMS; POLARIZATION; TEMPERATURE;
D O I
10.1016/j.physb.2023.415470
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this report, rigorous calculations based on density functional theory have been performed to study the piezoelectric and elastic properties of wurtzite aluminum nitride (w-AlN) with single- and co-alloying by Hf (or Zr) and Sc. It is found that the (HfSc)0.375Al0.625N and (ZrSc)0.375Al0.625N with stable wurtzite phase, exhibit a piezoelectric coefficient d33 as large as 49.18 pC/N and 47.00 pC/N, respectively. However, the piezoelectric voltage constant g33 and electromechanical coupling constant k233 of HfAlN, ZrAlN, HfScAlN, and ZrScAlN are smaller than that of the ScAlN counterpart, which is due to the large dielectric constant epsilon 33 of Hf (or Zr) alloying samples. Furthermore, the internal parameter u and the bond angle alpha were calculated to elucidate the brittle-toductile transformation in alloying w-AlN crystal structure. Electronic structure calculations show that the bandgap decreases almost linearly concerning the increase of alloying concentration, and the Hf (or Zr) alloying compounds become n-type semiconductors due to the existing high-charge states.
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页数:8
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