High throughput calculations for a dataset of bilayer materials

被引:12
作者
Barik, Ranjan Kumar [1 ]
Woods, Lilia M. [1 ]
机构
[1] Univ S Florida, Dept Phys, Tampa, FL 33620 USA
关键词
TRANSITION-METAL DICHALCOGENIDES; KAPPA GATE DIELECTRICS; LAYER; CONDUCTIVITY;
D O I
10.1038/s41597-023-02146-7
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Bilayer materials made of 2D monolayers are emerging as new systems creating diverse opportunities for basic research and applications in optoelectronics, thermoelectrics, and topological science among others. Herein, we present a computational bilayer materials dataset containing 760 structures with their structural, electronic, and transport properties. Different stacking patterns of each bilayer have been framed by analyzing their monolayer symmetries. Density functional theory calculations including van der Waals interactions are carried out for each stacking pattern to evaluate the corresponding ground states, which are correctly identified for experimentally synthesized transition metal dichalcogenides, graphene, boron nitride, and silicene. Binding energies and interlayer charge transfer are evaluated to analyze the interlayer coupling strength. Our dataset can be used for materials screening and data-assisted modeling for desired thermoelectric or optoelectronic applications.
引用
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页数:12
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