Three-electrode germanium-on-silicon avalanche photodiode array

被引：8

作者：

Liu, XiaoBin ^{[1
]}

LI, XueTong ^{[1
]}

Zhi, ZiHao ^{[1
]}

LI, YingZhi ^{[1
]}

Chen, BaiSong ^{[1
]}

Xie, QiJie ^{[2
]}

Na, Quanxin ^{[2
]}

LI, XueYan ^{[1
]}

Guo, PengFei ^{[3
]}

Gao, FengLi ^{[1
]}

LO, GuoQiang ^{[3
]}

Kang, BoNan ^{[1
]}

Song, Junfeng ^{[1
,2
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

[2] Peng Cheng Lab, Shenzhen 519000, Peoples R China

[3] Adv Micro Foundry Pte Ltd, 11 Sci Pk Rd,Sci Pk 2, Singapore 117685, Singapore

来源：

OPTICS LETTERS | 2023年 / 48卷 / 07期

基金：

中国国家自然科学基金;

关键词：

GE/SI;

D O I：

10.1364/OL.477463

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this Letter, we report a bridge-connected three -electrode germanium-on-silicon (Ge-on-Si) avalanche pho-todiode (APD) array compatible with the complementary metal-oxide semiconductor (CMOS) process. In addition to the two electrodes on the Si substrate, a third electrode is designed for Ge. A single three-electrode APD was tested and analyzed. By applying a positive voltage on the Ge elec-trode, the dark current of the device can be reduced, and yet the response of the device can be increased. Under a dark current of 100 nA, as the voltage on Ge increases from 0 V to 15 V, the light responsivity is increased from 0.6 A/W to 1.17 A/W. We report, for the first time to the best of our knowl-edge, the near-infrared imaging properties of an array of three-electrode Ge-on-Si APDs. Experiments show that the device can be used for LiDAR imaging and low-light detec-tion.(c) 2023 Optica Publishing Group

引用

页码：1846 / 1849

页数：4

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