From P-type to N-type: Peripheral fluorination of axially substituted silicon phthalocyanines enables fine tuning of charge transport

被引:8
作者
Vebber, Mario C. [1 ]
King, Benjamin [1 ]
French, Callum [1 ]
Tousignant, Mathieu [1 ]
Ronnasi, Bahar [1 ]
Dindault, Chloe [2 ]
Wantz, Guillaume [2 ]
Hirsch, Lionel [2 ]
Brusso, Jaclyn [3 ]
Lessard, Benoit H. [1 ,4 ]
机构
[1] Univ Ottawa, Dept Chem & Biol Engn, 161 Louis Pasteur, Ottawa, ON, Canada
[2] Univ Bordeaux, IMS, Bordeaux INP, CNRS, Talence, France
[3] Univ Ottawa, Dept Chem & Biomol Sci, Ottawa, ON, Canada
[4] Univ Ottawa, Sch Elect Engn & Comp Sci, Ottawa, ON, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
air-stability; fluorine; organic electronics; phthalocyanine; transistors; THIN-FILM TRANSISTORS; ORGANIC SEMICONDUCTORS; MATERIALS DESIGN; SOLAR-CELLS; POLYMER; OPTIMIZATION; FULLERENE; EXCHANGE; POSITION; GOLD;
D O I
10.1002/cjce.24843
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
Silicon phthalocyanines (R-2-SiPcs) are a family of promising tunable materials for organic electronic applications. We report the chemistry of the synthesis of axially substituted fluorinated SiPcs (tb-Ph)(2)-FxSiPc (where X = 0, 4, 8, or 16) and explore how the degree of fluorination effects optical and electronic properties. A new treatment with boron trichloride was included to obtain Cl-2-F(X)SiPcs from F-2-F(X)SiPcs, activating the axial position for further functionalization. We observed that as the degree of fluorination increased, so did the electron affinity of the compounds, leading to a drop in frontier orbital levels, as measured by electrochemistry and ultraviolet photoelectron spectroscopy (UPS). The deeper energy levels enabled successful (tb-Ph)(2)-F4SiPc and poly [[6,7-difluoro[(2-hexyldecyl)oxy]-[5,8-quinoxalinediyl]-2,5-thiophenediyl]] (PTQ10) blends for organic photovoltaics and photodetectors. All four compounds were incorporated in organic thin-film transistors (OTFTs), where the degree of fluorination influenced device operation, changing it from p-type conduction for (tb-Ph)(2)-F0SiPc, to ambipolar for (tb-Ph)(2)-F4SiPc, and n-type for (tb-Ph)(2)-F8SiPc and (tb-Ph)(2)-F16SiPc. The OTFT devices made with (tb-Ph)(2)-F16SiPc achieved a low average threshold voltage of 7.0 V in N-2 and retained its n-type mobility when exposed to air.
引用
收藏
页码:3019 / 3031
页数:13
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