Effect of junction temperature on 1.3 μm InAs/GaAs quantum dot lasers directly grown on silicon

Laser junction temperature (T-j) is an essential parameter that directly affects the light power and lifetime of semiconductor lasers. Here, we investigate the effect of T-j on an InAs/GaAs quantum dot (QD) laser grown on a Si(001) substrate. Under 1% low pulsed current (1 mu s pulse width and 100 mu s period), the pure temperature-induced mode shift rate is 0.084 nm/degrees C. By increasing the duty cycle and measuring the corresponding mode wavelength shift, the laser's T-j under the continuous-wave (Tj-CW) mode is predicted to be from 31.1 to 81.6 degrees C when the injection current increases from 100 to 550 mA. Next, the average thermal resistance is 36.2 degrees C/W. Moreover, the non-negligible increase in Tj-CW is analyzed to significantly reduce the mean-time-to-failure of Si-based QD laser, especially for cases under high CW injection currents. These results provide an accurate reference for the thermal analysis of silicon-based QD lasers and point the way to high performance on-chip light sources by improving the laser heat accumulation.<br /> (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(http://creativecommons.org/licenses/by/4.0/).