Semiempirical Two-Dimensional Model of the Bipolar Resistive Switching Process in Si-NCs/SiO2 Multilayers

被引：0

作者：

Ramirez-Rios, Juan ^{[1
]}

Gonzalez-Flores, Karla Esther ^{[1
]}

Aviles-Bravo, Jose Juan ^{[1
]}

Perez-Garcia, Sergio Alfonso ^{[2
]}

Flores-Mendez, Javier ^{[3
,4
]}

Moreno-Moreno, Mario ^{[1
]}

Morales-Sanchez, Alfredo ^{[1
]}

机构：

[1] Inst Nacl Astrofis Opt & Electr, Elect Dept, Cholula 72840, Puebla, Mexico

[2] Ctr Invest Mat Avanzados SC, Unidad Monterrey, Parque Invest Innovac Tecnol PIIT, Apodaca 66628, Nuevo Leon, Mexico

[3] Tecnol Nacl Mexcio IT Puebla, Div Estudios Posgrad Invest, Ave Tecnol 420, Puebla 72220, Mexico

[4] Benemerita Univ Autonoma Puebla, Area Ingn, Ciudad Univ,Blvd Valsequillo & Esquina,Ave San Cla, San Manuel 72570, Puebla, Mexico

来源：

NANOMATERIALS | 2023年 / 13卷 / 14期

关键词：

resistive switching memory; conductive filaments; silicon nanocrystals; two-dimensional oxygen vacancy configuration; valence change memory; PARAMETER VARIATION; RESET MECHANISM; RRAM; MEMORY; CONDUCTION;

D O I：

10.3390/nano13142124

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this work, the SET and RESET processes of bipolar resistive switching memories with silicon nanocrystals (Si-NCs) embedded in an oxide matrix is simulated by a stochastic model. This model is based on the estimation of two-dimensional oxygen vacancy configurations and their relationship with the resistive state. The simulation data are compared with the experimental current-voltage data of Si-NCs/SiO2 multilayer-based memristor devices. Devices with 1 and 3 Si-NCs/SiO2 bilayers were analyzed. The Si-NCs are assumed as agglomerates of fixed oxygen vacancies, which promote the formation of conductive filaments (CFs) through the multilayer according to the simulations. In fact, an intermediate resistive state was observed in the forming process (experimental and simulated) of the 3-BL device, which is explained by the preferential generation of oxygen vacancies in the sites that form the complete CFs, through Si-NCs.

引用

页数：15

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