Novel Ag-Cu foam sheet with multi-layer composite structure for high performance joining of SiC power chips

被引:12
作者
Yin, Changhao [1 ]
Wumaeraili, Kuxitaer [1 ]
Zhang, Yu [1 ]
Wu, Yongchao [1 ]
Zhang, Jiahe [1 ]
Guo, Wei [1 ]
Zhu, Ying [1 ]
Song, Xiaoguo [2 ]
Jia, Qiang [3 ]
Zhang, Hongqiang [1 ,2 ]
机构
[1] Beihang Univ, Sch Mech Engn & Automat, Beijing 100191, Peoples R China
[2] Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Peoples R China
[3] Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China
基金
中国国家自然科学基金;
关键词
Power chip; Nano Ag -Cu foam; Ag sintering; Microstructure; High-temperature reliability; TEMPERATURE; TECHNOLOGY; STRENGTH; DEVICES; PASTE;
D O I
10.1016/j.matchar.2024.113696
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Conventional packaging materials are difficult to support long-lasting service in high-temperature environments. In this study, the novel nano Ag-Cu foam sheet was prepared by dealloying etching, and achieved joining chips and substrates by sintering at low temperature. The microstructure, mechanical properties and fracture path of the sintered joint were analyzed. The grain size in the sintered interface showed a gradient change, which brought excellent shear strength. The sintered joint showed that the oxidation behavior caused during the hightemperature aging tests would reduce the shear strength. The energy absorption effect of the sintered layer could alleviate joint fatigue under thermal shock conditions, thus ensuring the robust lifetime of the sintered joint for high-temperature application.
引用
收藏
页数:11
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共 41 条
  • [1] Processing and characterization of nanosilver pastes for die-attaching SiC devices
    Bai, John G.
    Calata, Jesus N.
    Lu, Guo-Quan
    [J]. IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, 2007, 30 (04): : 241 - 245
  • [2] Copper nanoparticles of well-controlled size and shape: a new advance in synthesis and self-organization
    Ben Aissa, Mohamed Ali
    Tremblay, Benoit
    Andrieux-Ledier, Amandine
    Maisonhaute, Emmanuel
    Raouafi, Noureddine
    Courty, Alexa
    [J]. NANOSCALE, 2015, 7 (07) : 3189 - 3195
  • [3] State of the art of high temperature power electronics
    Buttay, Cyril
    Planson, Dominique
    Allard, Bruno
    Bergogne, Dominique
    Bevilacqua, Pascal
    Joubert, Charles
    Lazar, Mihai
    Martin, Christian
    Morel, Herve
    Tournier, Dominique
    Raynaud, Christophe
    [J]. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2011, 176 (04): : 283 - 288
  • [4] Trends in automotive power semiconductor packaging
    Dietrich, Peter
    [J]. MICROELECTRONICS RELIABILITY, 2013, 53 (9-11) : 1681 - 1686
  • [5] SILICON-ON-INSULATOR TECHNOLOGY FOR HIGH-TEMPERATURE METAL-OXIDE-SEMICONDUCTOR DEVICES AND CIRCUITS
    FLANDRE, D
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 7 - 12
  • [6] Power conversion with SiC devices at extremely high ambient temperatures
    Funaki, Tsuyoshi
    Balda, Juan Carlos
    Junghans, Jeremy
    Kashyap, Avinash S.
    Mantooth, H. Alan
    Barlow, Fred
    Kimoto, Tsunenobu
    Hikihara, Takashi
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2007, 22 (04) : 1321 - 1329
  • [7] The effect of finish layer on the interfacial cracking failure of Au-Si bonding
    Gao, Li-Yin
    Wen, Jian
    Li, Cai-Fu
    Chen, Chunhuan
    Liu, Zhi-Quan
    [J]. ENGINEERING FAILURE ANALYSIS, 2020, 115
  • [8] Effect of Surface Roughening of Temperature-Cycled Ceramic-Metal-Bonded Substrates on Thermomechanical Reliability of Sintered-Silver Joints
    Gao, Shan
    Yuki, Seiya
    Osanai, Hideyo
    Sun, Weizhen
    Ngo, Khai D. T.
    Lu, Guo-Quan
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2018, 18 (02) : 291 - 297
  • [9] Size effect on the fracture of sintered porous nano-silver joints: Experiments and Weibull analysis
    Gong He
    Yao Yao
    Yang Yuting
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 863
  • [10] Packaging Technology for Electronic Applications in Harsh High-Temperature Environments
    Hagler, Ping
    Henson, Phillip
    Johnson, R. Wayne
    [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2011, 58 (07) : 2673 - 2682