Strain-induced high Chern number topological insulator state in Fe- or V-decorated MoS2 monolayers

被引:1
|
作者
Moradi, Siyavash [1 ,2 ]
Sadeghi, Ali [1 ]
机构
[1] Shahid Beheshti Univ, Dept Phys, Tehran 1983969411, Iran
[2] Tech Univ Munich, Dept Chem, TUM Sch Nat Sci, Lichtenbergstr 4, D-85748 Garching, Germany
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.109.035165
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure and topological state of an MoS2 monolayer decorated by iron or vanadium adatoms is investigated by first -principles calculations. It is shown that several Chern insulator phases occur in these samples in the presence of external strain or electric field. In particular, Chern number C = 2 is achieved by applying 6% biaxial tensile strain on the V -decorated MoS2 monolayer or 10% on the Fe -decorated one. On the other hand, the intrinsic C = 1 phase of the iron system is switched to the normal insulator phase under an electric field of 0.8 V/angstrom, while the vanadium system with intrinsic C = -1 state adopts a C = 1 state if the electric field reaches 0.7 V/angstrom. The induced band inversion may coincide with an abrupt increase of magnetization and a simultaneous change in the adatom adsorption height, or a magnetization decrement without displacement of the adatom. Our findings suggest that applying an in -plane biaxial tensile strain is a promising direction to search high Chern number states.
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页数:9
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