Effect of substrate temperature on structure, morphology and optical properties of Sb2Se3 thin films fabricated by chemical-molecular beam deposition method from Sb and Se precursors for solar cells

被引：3

作者：

Razykov, T. M. ^{[1
]}

Bosio, A. ^{[2
]}

Kouchkarov, K. M. ^{[1
]}

Khurramov, R. R. ^{[1
]}

Tivanov, M. S. ^{[3
]}

Bayko, D. S. ^{[3
]}

Romeo, A. ^{[4
]}

Romeo, N. ^{[2
]}

机构：

[1] Phys Tech Inst, Chingiz Aytmatov St 2B, Tashkent 100084, Uzbekistan

[2] Univ Parma, Dipartimento Fis, Via GP Usberti 7-A, Parma, Italy

[3] Belarusian State Univ, Fac Phys, Minsk 220030, BELARUS

[4] Univ Verona, CaVignal 2-Str Grazie 15, I-37134 Verona, Italy

来源：

THIN SOLID FILMS | 2024年 / 791卷

关键词：

Antimony triselenide; Chemical molecular beam deposition; Raman spectroscopy; SELENIZATION; MULTILAYER; GROWTH;

D O I：

10.1016/j.tsf.2024.140218

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sb2Se3 thin films were obtained by chemical-molecular beam deposition on soda-lime glass from high purity Sb and Se precursors at 400 degrees C, 450 degrees C and 500 degrees C substrate temperature. Due to the precise control of the Sb/Se ratio, Sb2Se3 thin films with stoichiometric composition were obtained, which was confirmed by energy-dispersive X-ray microanalysis. The effect of substrate temperature on morphology, structure and optical properties of Sb2Se3 thin-films were studied by scanning electron microscopy, atomic force microscopy, X-ray diffraction, Raman spectroscopy and from the analysis of absorption and transmission spectra of the films. Average diameters and lengths of Sb2Se3 rods deposited at different substrate temperature were the range of 0.5-2 mu m and 1-4 mu m respectively which was grown at different slope and compactness to the substrate. The optical bandgap of the films was determined from the transmission and reflection spectra and 1.16, 1.21 and 1.26 eV band gap energies were observed for 500, 450 and 400 degree celsius substrate temperature Sb2Se3 thin films respectively.

引用

页数：5

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