Reduction of vacancy defects induced by thermal annealing in β-Ga2O3 epilayer

被引：8

作者：

Fan, Teng ^{[1
,2
]}

Tang, Ning ^{[1
,2
,3
,4
]}

Wei, Jiaqi ^{[1
,2
]}

Zhang, Shixiong ^{[1
,2
]}

Sun, Zhenhao ^{[1
,2
]}

Li, Guoping ^{[1
,2
]}

Jiang, Jiayang ^{[1
,2
]}

Fu, Lei ^{[1
,2
]}

Zhang, Yunfan ^{[1
,2
]}

Yuan, Ye ^{[5
]}

Rong, Xin ^{[1
,2
]}

Ge, Weikun ^{[1
,2
]}

Wang, Xinqiang ^{[1
,2
,3
,4
]}

Shen, Bo ^{[1
,2
,3
,4
]}

机构：

[1] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Frontiers Sci Ctr Nanooptoelectron, Sch Phys, Beijing 100871, Peoples R China

[3] Peking Univ, Yangtze Delta Inst Optoelect, Nantong 226010, Jiangsu, Peoples R China

[4] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

[5] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China

来源：

MICRO AND NANOSTRUCTURES | 2023年 / 176卷

基金：

中国国家自然科学基金;

关键词：

beta-Ga2O3; Thermal annealing; Vacancy defects; GaO4; tetrahedra; PHOTOLUMINESCENCE; FABRICATION; PRESSURE; GA2O3; FILMS; BETA;

D O I：

10.1016/j.micrna.2023.207525

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effects of annealing in oxygen atmosphere of beta-Ga2O3 epilayers were investigated by X-ray photoelectron spectroscopy, photoluminescence and Fourier-transform infrared spectroscopy. The increasing proportions of Ga3+ and O-L (lattice oxygen) signifies the reduction of V-O as the annealing temperature rising. The variations of the photoluminescence emissions demonstrate the improvement of the crystal quality and reduction of V-O(1), V-O(2) and V-Ga. V-O and V-Ga are filled with oxygen atoms and gallium atoms after annealing, mainly attributed to the bonds con-structions of Ga (1)-O (1) and Ga (1)-O (2) in GaO4 tetrahedra. These results offer detailed in-formation and guidelines for removing intrinsic point defects in beta-Ga2O3.

引用

页数：9

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