Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS

被引:4
作者
Isah, Mustapha [1 ,2 ]
Doroody, Camellia [1 ,3 ]
Rahman, Kazi Sajedur [4 ]
Abd Rahman, Mohd Nazri [5 ]
Goje, Adamu Ahmed [6 ]
Soudagar, Manzoore Elahi M. [3 ,7 ]
Kiong, Tiong Sieh [1 ,3 ]
Mubarak, Nabisab Mujawar [8 ,9 ]
Zuhdi, Ahmad Wafi Mahmood [1 ,3 ]
机构
[1] Univ Tenaga Nas, Coll Engn, Jalan IKRAM UNITEN, Kajang 43000, Selangor, Malaysia
[2] Kaduna State Univ, Dept Phys, PMB 2339,Tafawa Balewa Way, Kaduna, Kaduna State, Nigeria
[3] Univ Tenaga Nas, Inst Sustainable Energy ISE, Jalan IKRAM UNITEN, Kajang 43000, Selangor, Malaysia
[4] Univ Kebangsaan Malaysia, Solar Energy Res Inst, Bangi 43600, Selangor, Malaysia
[5] Univ Tenaga Nas, Inst Power Engn, Jalan IKRAM UNITEN, Kajang 43000, Selangor, Malaysia
[6] Fed Polytech Damaturu, Dept Sci Lab Technol, Damaturu, Yobe State, Nigeria
[7] Graph Era Deemed Univ, Dept Mech Engn, Dehra Dun 248002, Uttarakhand, India
[8] Univ Teknol Brunei, Fac Engn, Petr & Chem Engn, BE-1410 Bandar Seri Begawan, Brunei
[9] Lovely Profess Univ, Sch Chem Engn & Phys Sci, Dept Chem, Jalandhar, Punjab, India
关键词
Energy; Defect density; Trap levels; CdTe/Si tandem solar cell; Multijunction solar cells; wxAMPS; MOOD STATES; ALTITUDE; PERFORMANCE; EXPOSURE; HYPOXIA; ANXIETY;
D O I
10.1038/s41598-024-55616-2
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
A numerical analysis of a CdTe/Si dual-junction solar cell in terms of defect density introduced at various defect energy levels in the absorber layer is provided. The impact of defect concentration is analyzed against the thickness of the CdTe layer, and variation of the top and bottom cell bandgaps is studied. The results show that CdTe thin film with defects density between 1014 and 1015 cm-3 is acceptable for the top cell of the designed dual-junction solar cell. The variations of the defect concentrations against the thickness of the CdTe layer indicate that the open circuit voltage, short circuit current density, and efficiency (n) are more affected by the defect density at higher CdTe thickness. In contrast, the Fill factor is mainly affected by the defect density, regardless of the thin film's thickness. An acceptable defect density of up to 1015 cm-3 at a CdTe thickness of 300 nm was obtained from this work. The bandgap variation shows optimal results for a CdTe with bandgaps ranging from 1.45 to 1.7 eV in tandem with a Si bandgap of about 1.1 eV. This study highlights the significance of tailoring defect density at different energy levels to realize viable CdTe/Si dual junction tandem solar cells. It also demonstrates how the impact of defect concentration changes with the thickness of the solar cell absorber layer.
引用
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页数:10
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