A comprehensive study on the Hall mobility of an ohmic ensemble of two-dimensional electrons confined in a quantum well of a heterostructure at low lattice temperatures

In the present study, the characteristic dependence of the Hall mobility upon the temperature of a degenerate ensemble of two-dimensional electrons in a well of heterostructure were calculated in broader detail, for the ohmic field region, at low temperatures. Apart from the electronic interactions with the remote ionized impurities and the surface roughness, the study also duly considered some factors that are often ignored for mathematical simplicity. These include the inelasticity of the electron-phonon collisions and the true phonon distribution. The results thus obtained for heterostructures such as AlGaAs/GaAs, AlGaN/GaN, and AlInSb/InSb show that the consideration of the above details significantly changes the overall characteristics, and makes them agree quite well with the experimental data.