Enhanced photogalvanic effect in the B3C2P3 photodetector by vacancy, substitution-doping and interstitial atom

The B3C2P3 monolayer has been predicted and studied in the article (J. Phys. Chem. Lett. 2021, 12, 3436-3442). In this paper, we investigate inear photogalvanic effects (PGEs) in the B3C2P3 photodetector. We found that when the linearly polarized light illuminating on the pristine armchair and zigzag B3C2P3 photodetectors, they can produce photocurrents with the cosine and sine relations on the incident angles, respectively. Moreover, when the vacancies, substitution-doping and interstitial atom were severally imported, the produced photocurrents prominently enlarged, corresponding to the existence of robust PGEs, for their incremental asymmetry in the B3C2P3 photodetector, and the B3C2P3 photodetector possess relatively high extinction ratio corresponding to a more sensitive polarization detection. Additionally, when the O interstitial atom or Mo substitution-doping included, very high spin polarization formed accordingly. This work demonstrates great potential applications of the B3C2P3 monolayer on PGE-driven photodetectors in low energy-consumption optoelectronics and spintronics devices.