Total-Ionizing-Dose Effects and Low-Frequency Noise in N-Type Carbon Nanotube Field-Effect Transistors With HfO2 Gate Dielectrics

被引：3

作者：

Darmawi-Iskandar, Patrick K. ^{[1
]}

Aaron, Andrew M. ^{[1
]}

Zhang, En Xia ^{[1
]}

Bhuva, Bharat L. ^{[1
]}

Kauppila, Jeffery S. ^{[1
]}

Davidson, Jim L. ^{[1
]}

Alles, Michael L. ^{[1
]}

Fleetwood, Daniel M. ^{[1
]}

Massengill, Lloyd W. ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2023年 / 70卷 / 04期

关键词：

1/f; border traps; carbon nanotube field-effect transistor (CNTFET); single-walled carbon nanotubes (SWC-NTs); LFN; percolation; total ionizing dose (TID); 1/F NOISE; BORDER TRAPS; X-RAY; RADIATION RESPONSE; DEFECT FORMATION; MOS; INTERFACE; PERFORMANCE; TEMPERATURE; ELECTRONICS;

D O I：

10.1109/TNS.2023.3242644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total ionizing dose (TID) irradiation and low-frequency noise characterization are performed on carbon nanotube field-effect transistors (CNTFETs). Large hysteresis due to high border-trap densities is observed in as-processed and irradiated devices. TID irradiation also leads to significant radiation-induced charge trapping in the surrounding dielectrics resulting in parametric degradation. Percolation-path switching and border traps contribute to low-frequency noise, with a relatively more prominent role for border traps after irradiation than before irradiation. These results show that process improvements are required to optimize both the initial operating characteristics and the radiation response of CNTFETs.

引用

页码：449 / 455

页数：7

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