Design, Simulation and Comparative Analysis of Two Stage Operational Amplifier Based on CNTFETs Using Indirect Feedback Frequency Compensation

被引:1
|
作者
Islam, Mir Bintul [1 ]
Nizamuddin, M. [1 ]
Islam, S. S. [2 ]
机构
[1] Jamia Millia Islamia, Elect & Commun Engn Dept, New Delhi 110025, India
[2] Jamia Millia Islamia, Ctr Nanosci & Nanotechnol, New Delhi, India
关键词
CNTFET; GNRFET; op-amp; DC gain; integrator; FIELD-EFFECT TRANSISTORS; COMPACT SPICE MODEL; HIGH-PERFORMANCE; CARBON NANOTUBES; INCLUDING NONIDEALITIES; ELECTRONICS; STRATEGY;
D O I
10.1142/S0218126624501573
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In the course of this study, an efficient implementation of a high gain and low power two-stage operational amplifier using indirect feedback frequency compensation based on CNTFETs. HSPICE software was used to develop and simulate CNTFETs. The op-amps were designed using 0.9V input supply voltage. The proposed structures were formed either using CNTFETs only known as pure CNTFET-IFFC-2SOA or hybrid structures consisting a mix of both CNTFETs and conventional CMOS named as PCNTFET-NMOS-IFFC-2SOA and NCNTFET-PMOS-2SOA. The comparative investigation revealed that CNT-based structures performed significantly better than the traditional CMOS-based devices. In the instance of CNTFET-IFFC-2SOA, there was a considerable improvement in DC gain, power dissipation, phase margin, and CMRR. The DC Gain increased by 140.92%, the CMRR increased by 32.94%, and the phase margin increased by 4.9%. Furthermore, at the 32nm technology node, a GNRFET-based structure was designed and compared to conventional CMOS and pure CNTFET-based IFFC-2SOA. It was discovered that the DC gain, phase margin, and power dissipation obtained by the CNTFET-based structure were superior to both. The DC Gain of CNTFET-IFFC-2SOA was 156.79% more than that of GNRFET-IFFC-2SOA. To confirm the workability of the proposed circuits, an integrator was designed and simulated as its application. The CNTFET-based IFFC-2SOA integrators showed better integration action than the traditional CMOS-IFFC-2SOA.
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页数:28
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