Super-hydrophilic BiVO4/MgO/FeCo2O4 charge migration achieves efficient photoelectrochemical performance

被引:53
作者
Wei, Xinxin [1 ]
Zhang, Jing [1 ]
Wang, Lei [1 ]
Bai, Yan [2 ]
Huang, Jingwei [1 ]
She, Houde [1 ]
Wang, Qizhao [1 ]
机构
[1] Northwest Normal Univ, Coll Chem & Chem Engn, Gansu Int Scient & Technol Cooperat Base Water Ret, Lanzhou 730070, Peoples R China
[2] Northwest Normal Univ, Coll Geog & Environm Sci, Lanzhou 730070, Peoples R China
关键词
BiVO4; Water splitting; Interlayer; Charge migration; Super-hydrophilicity; HYDROGEN-PRODUCTION; WATER; PHOTOANODES; INTERFACE; FECO2O4; PHOTOCATALYSTS; NANOSHEETS; ELECTRODE; ENERGY;
D O I
10.1016/j.cej.2024.149114
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
To address the issue of inefficient charge transfer efficiency at the semiconductor/cocatalyst interface, we engineered a BiVO4/MgO/FeCo2O4 array, incorporating a MgO interlayer. This design aimed to enhance the performance of photoelectrochemical (PEC) water splitting on BiVO4 and FeCo2O4. The introduced interlayer efficiently hinders hole backflow, promoting unimpeded charge migration within the multi-hybrid structure. This, in turn, significantly reduces the recombination of electron-hole pairs. In addition, the BiVO4/MgO/FeCo2O4 undergoes a low-temperature plasma treatment, resulting in super-hydrophilicity. This treatment enhances charge migration efficiency and fosters extensive contact between the electrolyte and electrode interfaces. Photoelectrochemical analysis demonstrates that H-BiVO4/MgO/FeCo2O4 exhibits exceptional performance for the oxygen evolution reaction (OER), showcasing a photocurrent density of 4.3 mA.cm(-2) at 1.23 V vs. RHE in 0.5 M Na2SO4 under AM 1.5 G (100 mW.cm(-2)) illumination. Remarkably, this value is 5.2 times higher than that observed for BiVO4. Furthermore, the maximum incident photon to current conversion efficiency (IPCE) reaches an impressive 61.7 %, surpassing that of BiVO4 and BiVO4/FeCo2O4 by approximately 5.1 and 1.7 times, respectively. Additionally, the charge separation efficiency of H-BiVO4/MgO/FeCo2O4 achieves a notable 83.4 %, and the charge injection efficiency is substantially improved. This study advocates for a straightforward yet highly effective approach to mitigate interfacial electron-hole recombination.
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页数:9
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