Heterointegration of mm-Wave InP-HBT Power Amplifier Chiplets on SiGe-BiCMOS Chip

被引：1

作者：

Yacoub, Hady ^{[1
]}

Rausch, Marko ^{[1
]}

Stoelmacker, Christoph ^{[1
]}

Doerner, Ralf ^{[1
]}

Hossain, Maruf ^{[1
]}

Ostermay, Ina ^{[1
]}

Moule, Taylor ^{[1
]}

Wietstruck, Matthias ^{[2
]}

Knigge, Steffen ^{[1
]}

Krueger, Olaf ^{[1
]}

Heinrich, Wolfgang ^{[1
]}

机构：

[1] Leibniz Inst Hoechstfrequenztech, Ferdinand Braun Inst, Berlin, Germany

[2] IHP Leibniz Inst Innovat Mikroelekt, Frankfurt, Germany

来源：

2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC | 2023年

关键词：

Heterointegration; power amplifier; InP; HBT; BiCMOS; mm-wave; GHZ;

D O I：

10.23919/EuMIC58042.2023.10289026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we demonstrate InP chiplet heterointegration on SiGe-BiCMOS carriers for mm-wave applications. A flip-chip type of assembly with indium-based microbumps allows for seamless integration with minimal losses up to more than 300 GHz. A single-stage InP-HBT power amplifier was used to highlight the functionality of the heterointegration approach.

引用

页码：169 / 172

页数：4

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