Heterointegration of mm-Wave InP-HBT Power Amplifier Chiplets on SiGe-BiCMOS Chip

被引：1
|
作者：
Yacoub, Hady [1 ]
Rausch, Marko [1 ]
Stoelmacker, Christoph [1 ]
Doerner, Ralf [1 ]
Hossain, Maruf [1 ]
Ostermay, Ina [1 ]
Moule, Taylor [1 ]
Wietstruck, Matthias [2 ]
Knigge, Steffen [1 ]
Krueger, Olaf [1 ]
Heinrich, Wolfgang [1 ]
机构：
[1] Leibniz Inst Hoechstfrequenztech, Ferdinand Braun Inst, Berlin, Germany
[2] IHP Leibniz Inst Innovat Mikroelekt, Frankfurt, Germany
来源：
2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC | 2023年
关键词：
Heterointegration; power amplifier; InP; HBT; BiCMOS; mm-wave; GHZ;
D O I：
10.23919/EuMIC58042.2023.10289026
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we demonstrate InP chiplet heterointegration on SiGe-BiCMOS carriers for mm-wave applications. A flip-chip type of assembly with indium-based microbumps allows for seamless integration with minimal losses up to more than 300 GHz. A single-stage InP-HBT power amplifier was used to highlight the functionality of the heterointegration approach.
引用
收藏
页码：169 / 172
页数：4
相关论文
共 50 条
  • [31] 60-GHz SiGe-BiCMOS Power Amplifier With 14.7 dBm Output Power and 18 dB Power Gain
    Ferchichi, Ali
    Rehman, Sami Ur
    Carta, Corrado
    Ellinger, Frank
    2019 12TH GERMAN MICROWAVE CONFERENCE (GEMIC), 2019, : 229 - 231
  • [32] Watt-Level mm-Wave Digital Polar Transmitters using Switching Power Amplifiers in SiGe HBT
    Hashemi, Hossein
    Datta, Kunal
    2014 IEEE INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC), 2014, : 61 - 64
  • [33] Highly Linear mm-Wave CMOS Power Amplifier
    Park, Byungjoon
    Jin, Sangsu
    Jeong, Daechul
    Kim, Jooseung
    Cho, Yunsung
    Moon, Kyunghoon
    Kim, Bumman
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (12) : 4535 - 4544
  • [34] A 0.13 μm SiGe BiCMOS Technology for mm-Wave Mixed-Signal Applications
    Ruecker, Holger
    Heinemann, Bernd
    Mai, Andreas
    Tillack, Bernd
    MIXDES 2009: PROCEEDINGS OF THE 16TH INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2009, : 19 - 22
  • [35] The Transformer Coupled mm-Wave CMOS Power Amplifier
    Kim, Ki-Jin
    Lim, T. H.
    Ahn, K. H.
    PROCEEDINGS OF THE 2010 IEEE ASIA PACIFIC CONFERENCE ON CIRCUIT AND SYSTEM (APCCAS), 2010, : 276 - 279
  • [36] A 38-GHz Millimeter-Wave Double-Stacked HBT Class-F-1 High-Gain Power Amplifier in 130-nm SiGe-BiCMOS
    Ali, Syed Muhammad Ammar
    Hasan, S. M. Rezaul
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2020, 68 (07) : 3039 - 3044
  • [37] A+18dBm, 79-87.5GHz Bandwidth Power Amplifier in 0.13μm SiGe-BiCMOS
    Zhao, Yi
    Long, John R.
    Spirito, Marco
    Akhnoukh, Atef B.
    2011 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2011, : 17 - 20
  • [38] InP DHBT technology for power amplifiers at mm-wave frequencies
    Midili, V.
    Nodjiadjim, V.
    Johansen, T. K.
    Squartecchia, M.
    Riet, M.
    Dupuy, J. Y.
    Konczykowska, A.
    MICROELECTRONICS JOURNAL, 2017, 67 : 111 - 119
  • [39] Gas Spectroscopy System for Breath Analysis at mm-wave/THz Using SiGe BiCMOS Circuits
    Schmalz, Klaus
    Rothbart, Nick
    Neumaier, Philipp F. -X.
    Borngraeber, Johannes
    Huebers, Heinz-Wilhelm
    Kissinger, Dietmar
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2017, 65 (05) : 1807 - 1818
  • [40] 200GHz fT SiGe HBT Load Pull Characterization at mm-Wave Frequencies
    Boglione, Luciano
    Webster, Richard T.
    2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM, 2010, : 215 - 218
12345