Heterointegration of mm-Wave InP-HBT Power Amplifier Chiplets on SiGe-BiCMOS Chip

被引：1
作者：
Yacoub, Hady [1 ]
Rausch, Marko [1 ]
Stoelmacker, Christoph [1 ]
Doerner, Ralf [1 ]
Hossain, Maruf [1 ]
Ostermay, Ina [1 ]
Moule, Taylor [1 ]
Wietstruck, Matthias [2 ]
Knigge, Steffen [1 ]
Krueger, Olaf [1 ]
Heinrich, Wolfgang [1 ]
机构：
[1] Leibniz Inst Hoechstfrequenztech, Ferdinand Braun Inst, Berlin, Germany
[2] IHP Leibniz Inst Innovat Mikroelekt, Frankfurt, Germany
来源：
2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC | 2023年
关键词：
Heterointegration; power amplifier; InP; HBT; BiCMOS; mm-wave; GHZ;
D O I：
10.23919/EuMIC58042.2023.10289026
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we demonstrate InP chiplet heterointegration on SiGe-BiCMOS carriers for mm-wave applications. A flip-chip type of assembly with indium-based microbumps allows for seamless integration with minimal losses up to more than 300 GHz. A single-stage InP-HBT power amplifier was used to highlight the functionality of the heterointegration approach.
引用
收藏
页码：169 / 172
页数：4
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