Quantitative measurement of local conductivity of SnO2 nanobelt field effect transistor utilizing microwave atomic force microscopy

被引：1
作者：
Zhao, Minji [1 ]
Kimura, Yasuhiro [1 ]
Toku, Yuhki [1 ]
Ju, Yang [1 ]
机构：
[1] Nagoya Univ, Dept Mech Sci & Engn, Nagoya 4648603, Japan
来源：
APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 01期
基金：
日本学术振兴会;
关键词：
microwave; atomic force microscopy; SnO2; nanobelt; field effect transistor; conductivity; M-AFM; GAS SENSORS; DEVICES;
D O I：
10.35848/1882-0786/acaaf3
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A non-contact quantitative method for measuring the electrical conductivity of a SnO2 nanobelt field-effect transistor (FET) with nanometer-scale spatial resolution is reported. The topography and microwave images of the nanobelt FET were measured by microwave atomic force microscopy (M-AFM) under a constant source voltage and different back-gate voltages. The output characteristics of the nanobelt FET were measured using a two-probe measurement method. The local conductivity of the SnO2 nanobelt FET measured by M-AFM concurred with that obtained by the two-probe measurement. Therefore, M-AFM is a promising method for measuring the local conductivity of nanomaterial FETs.
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页数：6
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