Thermal Stability of the Avalanche-Like Breakdown Performance in Conjugated Polymer-Based Lateral Power Devices

被引:2
|
作者
Lin, Haonan [1 ,2 ]
Zhang, Jun [1 ,2 ]
Zhou, Jiayi [1 ,2 ]
Wang, Yuhao [1 ,2 ]
Li, Man [1 ,2 ]
Zhang, Maolin [1 ,2 ]
Chen, Jing [1 ,2 ]
Yao, Jiafei [1 ,2 ]
Zhang, Guobin [3 ]
Bai, Song [3 ]
Guo, Yufeng [1 ,2 ]
机构
[1] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Natl & Local Joint Engn Lab RF Integrat & Micro Pa, Nanjing 210023, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210023, Peoples R China
[3] Nanjing Elect Devices Inst, State Key Lab Wide Bandgap Semicond Power Elect De, Nanjing 210016, Peoples R China
基金
中国国家自然科学基金;
关键词
Electric breakdown; Polymers; Performance evaluation; Thermal stability; Breakdown voltage; Conjugated polymers; thermal stability; avalanche-like breakdown; breakdown voltage; power device; MOBILITY; P3HT;
D O I
10.1109/LED.2023.3327133
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The potential of organic semiconductors(OSC) in forming power devices has been preliminarily demonstrated recently for their high breakdown performance. As one kind of narrow bandwidth semiconductor, the application of which in the power realm is also limited by its sensitivity to ambient temperature and self-heating effect. In this letter, the thermal stability of breakdown characteristics in the lateral drift region organic field transistor(LDR-OFET) is quantitatively and qualitatively explored. By employing the simple spin-coating process, the fabricated LDR-OFETs consist of a diketopyrrolopyrrole-based polymer(DPPT-TT) layer and a Poly (methyl methacrylate)(PMMA) layer as the semiconductor active layer and insulator layer, respectively. Based on the fabricated devices, the good thermal stability of OSC-based lateral power devices is observed. For the temperature ranges from 300-450K, neither the ambient temperature fluctuation nor the self-heating effect results in thermal runaway, making the copolymer OSC-based power devices capable of maintaining their off-state breakdown performance in a wide temperature range. Such a stable avalanche like breakdown performance indicates the outstanding potential of OSC-based devices in the power realm.
引用
收藏
页码:1991 / 1994
页数:4
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