Thermal Stability of the Avalanche-Like Breakdown Performance in Conjugated Polymer-Based Lateral Power Devices

The potential of organic semiconductors(OSC) in forming power devices has been preliminarily demonstrated recently for their high breakdown performance. As one kind of narrow bandwidth semiconductor, the application of which in the power realm is also limited by its sensitivity to ambient temperature and self-heating effect. In this letter, the thermal stability of breakdown characteristics in the lateral drift region organic field transistor(LDR-OFET) is quantitatively and qualitatively explored. By employing the simple spin-coating process, the fabricated LDR-OFETs consist of a diketopyrrolopyrrole-based polymer(DPPT-TT) layer and a Poly (methyl methacrylate)(PMMA) layer as the semiconductor active layer and insulator layer, respectively. Based on the fabricated devices, the good thermal stability of OSC-based lateral power devices is observed. For the temperature ranges from 300-450K, neither the ambient temperature fluctuation nor the self-heating effect results in thermal runaway, making the copolymer OSC-based power devices capable of maintaining their off-state breakdown performance in a wide temperature range. Such a stable avalanche like breakdown performance indicates the outstanding potential of OSC-based devices in the power realm.