Praseodymium content influence on the resistive switching effect of HfO2 -based RRAM devices

被引：0
作者：
Vinuesa, G. [1 ]
Garcia, H. [1 ]
Ossorio, O. G. [1 ]
Garcia-Ochoa, E. [1 ]
Aarik, L. [2 ]
Kukli, K. [2 ]
Castan, H. [1 ]
Duenas, S. [1 ]
机构：
[1] Univ Valladolid, Dept Elect, Valladolid, Spain
[2] Univ Tartu, Inst Phys, Tartu, Estonia
来源：
2023 14TH SPANISH CONFERENCE ON ELECTRON DEVICES, CDE | 2023年
关键词：
RRAM; resistive-switching; memristor; dielectric; hafnium; praseodymium; OXIDE;
D O I：
10.1109/CDE58627.2023.10339528
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work studies the effect of praseodymium doping on the resistive switching properties of HfO2 -based metal-insulator-metal devices. Samples with higher Pr content demonstrate lower switching voltages, and thus better resistive switching performance in terms of power consumption. Moreover, both devices with high and low Pr-content show good endurance characteristics. The lowest Pr-doped device delivering very low state cycle-to-cycle variability, and the highest Pr-content sample enduring a high number of cycles.
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页数：4
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