Praseodymium content influence on the resistive switching effect of HfO2 -based RRAM devices

被引：0
|
作者：
Vinuesa, G. [1 ]
Garcia, H. [1 ]
Ossorio, O. G. [1 ]
Garcia-Ochoa, E. [1 ]
Aarik, L. [2 ]
Kukli, K. [2 ]
Castan, H. [1 ]
Duenas, S. [1 ]
机构：
[1] Univ Valladolid, Dept Elect, Valladolid, Spain
[2] Univ Tartu, Inst Phys, Tartu, Estonia
来源：
2023 14TH SPANISH CONFERENCE ON ELECTRON DEVICES, CDE | 2023年
关键词：
RRAM; resistive-switching; memristor; dielectric; hafnium; praseodymium; OXIDE;
D O I：
10.1109/CDE58627.2023.10339528
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work studies the effect of praseodymium doping on the resistive switching properties of HfO2 -based metal-insulator-metal devices. Samples with higher Pr content demonstrate lower switching voltages, and thus better resistive switching performance in terms of power consumption. Moreover, both devices with high and low Pr-content show good endurance characteristics. The lowest Pr-doped device delivering very low state cycle-to-cycle variability, and the highest Pr-content sample enduring a high number of cycles.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Resistive switching characteristics of HfO2 based bipolar nonvolatile RRAM cell
    Lata, Lalit Kumar
    Jain, Praveen K.
    Chand, Umesh
    Bhatia, Deepak
    Shariq, Mohammad
    MATERIALS TODAY-PROCEEDINGS, 2020, 30 : 217 - 220
  • [2] Forming and Resistive Switching of HfO2-Based RRAM Devices at Cryogenic Temperature
    Quesada, Emilio Perez-Bosch
    Mistroni, Alberto
    Jia, Ruolan
    Reddy, Keerthi Dorai Swamy
    Reichmann, Felix
    Castan, Helena
    Duenas, Salvador
    Wenger, Christian
    Perez, Eduardo
    IEEE ELECTRON DEVICE LETTERS, 2024, 45 (12) : 2391 - 2394
  • [3] The Resistive Switching Characteristics of TiN/HfO2/Ag RRAM Devices with Bidirectional Current Compliance
    C. Sun
    S. M. Lu
    F. Jin
    W. Q. Mo
    J. L. Song
    K. F. Dong
    Journal of Electronic Materials, 2019, 48 : 2992 - 2999
  • [4] The Resistive Switching Characteristics of TiN/HfO2/Ag RRAM Devices with Bidirectional Current Compliance
    Sun, C.
    Lu, S. M.
    Jin, F.
    Mo, W. Q.
    Song, J. L.
    Dong, K. F.
    JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (05) : 2992 - 2999
  • [5] Effect of Doping Different Cu Valence States in HfO2 on Resistive Switching Properties of RRAM
    Yang, Jin
    Chen, Jun
    Hong, Yingzheng
    INORGANICS, 2022, 10 (06)
  • [6] Investigation of the Resistive Switching Behavior in Ni/HfO2-based RRAM Devices
    Gonzalez, M. B.
    Acero, M. C.
    Beldarrain, O.
    Zabala, M.
    Campabadal, F.
    PROCEEDINGS OF THE 2015 10TH SPANISH CONFERENCE ON ELECTRON DEVICES (CDE), 2015, : 14 - +
  • [7] Effects of Bottom Electrode Materials on the Resistive Switching Characteristics of HfO2-Based RRAM Devices
    Arun, N.
    Nageswara Rao, S. V. S.
    Pathak, A. P.
    JOURNAL OF ELECTRONIC MATERIALS, 2023, 52 (02) : 1541 - 1551
  • [8] Effects of Bottom Electrode Materials on the Resistive Switching Characteristics of HfO2-Based RRAM Devices
    N. Arun
    S. V. S. Nageswara Rao
    A. P. Pathak
    Journal of Electronic Materials, 2023, 52 : 1541 - 1551
  • [9] The behaviour of oxygen at metal electrodes in HfO2 based resistive switching devices
    Bradley, Samuel R.
    McKenna, Keith P.
    Shluger, Alexander L.
    MICROELECTRONIC ENGINEERING, 2013, 109 : 346 - 350
  • [10] Impact of Temperature on the Resistive Switching Behavior of Embedded HfO2-Based RRAM Devices
    Walczyk, Christian
    Walczyk, Damian
    Schroeder, Thomas
    Bertaud, Thomas
    Sowinska, Malgorzata
    Lukosius, Mindaugas
    Fraschke, Mirko
    Wolansky, Dirk
    Tillack, Bernd
    Miranda, Enrique
    Wenger, Christian
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (09) : 3124 - 3131
12345