Dislocation generation in diamond under extreme loading

被引:5
|
作者
Li, Alex C. [1 ]
Li, Boya [1 ]
Rudd, Robert E. [2 ]
Meyers, Marc A. [1 ]
机构
[1] Univ Calif San Diego, Program Mat Sci & Engn, La Jolla, CA 92093 USA
[2] Lawrence Livermore Natl Lab, Mat Sci Div, Livermore, CA 94550 USA
关键词
VOID GROWTH; DUCTILE; METALS; CARBON; INITIATION; SILICON; FAILURE;
D O I
10.1016/j.matt.2023.06.044
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond is, by virtue of its high bonding forces and Peierls-Nabarro barrier stresses, among the hardest materials on earth due to the difficulty of generating and moving dislocations. We demonstrate, using molecular dynamics and analytical calculations, that the generation of defects is dependent on loading orientation. Shock loading single-crystal diamond along [001] and [011] to a stress of 137 GPa did not reveal dislocations, whereas loading along [111] generated profuse dislocations. The introduction of a void at the latter orientation generated dislocations at 72.6 GPa. Two slip systems were identified: <011>{100} and <112>{111}. The threshold for plastic deformation in diamond is orientation dependent and significantly lower than reported in previous studies: 0.14 G (shear modulus). The void collapse generated localized amorphization for [001]. These results on the anisotropy of plasticity and void effects have relevance for the improvement of symmetry in the collapse of diamond capsules in inertial fusion experiments.
引用
收藏
页码:3040 / 3056
页数:18
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