X-ray diffractometric study of HDPE/GaAs and HDPE/GaAs<Te> composites

被引:1
|
作者
Gadzhieva, N. N. [1 ]
Ahmadova, G. B. [2 ]
Melikova, S. Z. [1 ]
Asadov, F. G. [1 ]
机构
[1] Minist Sci & Educ Republ Aze, Inst Radiat Problems, Baku, Azerbaijan
[2] Minist Sci & Educ Republ Azerbaijan, Inst Phys, Baku, Azerbaijan
来源
PHYSICS AND CHEMISTRY OF SOLID STATE | 2023年 / 24卷 / 01期
关键词
high density polyethylene; GaAs; GaAs < Te >; composites; X-ray diffractometry method;
D O I
10.15330/pcss.24.1.23-25
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
High-density polyethylene sheets (HDPE), HDPE/GaAs and HDPE/ GaAs<Te> composites with GaAs and GaAs<Te> semiconductor fillers were studied by X-ray diffractometry at room temperature. The degree of crystallization of these samples was calculated and it was determined that the inclusion of fillers in the polymer matrix (x=1-10% composite) leads to an increase in the degree of crystallization by 1.3-1.4 times. The obtained results are explained by the change of the upper molecular structure of the polymer.
引用
收藏
页码:23 / 25
页数:3
相关论文
共 50 条
  • [31] The study of cavitation in HDPE using time resolved synchrotron X-ray scattering during tensile deformation
    Schneider, K
    Trabelsi, S
    Zafeiropoulos, NE
    Davies, R
    Riekel, C
    Stamm, M
    MACROMOLECULAR SYMPOSIA, 2006, 236 : 241 - 248
  • [33] X-ray diffuse scattering characterization of microdefects in highly Te-doped annealed GaAs crystals
    Univ of Warsaw, Warsaw, Poland
    J Phys D, 15 (1883-1887):
  • [34] X-ray diffuse scattering characterization of microdefects in highly Te-doped annealed GaAs crystals
    Borowski, J
    Gronkowski, J
    Zielinska-Rohozinska, E
    Slupinski, T
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (15) : 1883 - 1887
  • [35] Structural properties of MnAs epitaxial films on GaAs:: an in situ x-ray study
    Jenichen, B
    Satapathy, DK
    Braun, W
    Kaganer, VM
    Daweritz, L
    Ploog, KH
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (10A) : A169 - A173
  • [36] X-ray pump optical probe cross-correlation study of GaAs
    Durbin, S. M.
    Clevenger, T.
    Graber, T.
    Henning, R.
    NATURE PHOTONICS, 2012, 6 (02) : 111 - 114
  • [37] Soft x-ray photoelectron spectroscopy study of the reaction of XeF 2 with GaAs
    Simpson, W.C.
    Varekamp, P.R.
    Shuh, D.K.
    Yarmoff, J.A.
    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1995, 13 (03): : 1709 - 1713
  • [38] X-ray pump optical probe cross-correlation study of GaAs
    S. M. Durbin
    T. Clevenger
    T. Graber
    R. Henning
    Durbin, S.M. (durbin@purdue.edu), 1600, Nature Publishing Group (06): : 111 - 114
  • [39] X-RAY STANDING-WAVE STUDY OF MONOLAYERS OF SB ON GAAS(110)
    KENDELEWICZ, T
    WOICIK, JC
    MIYANO, KE
    HERRERAGOMEZ, A
    COWAN, PL
    KARLIN, BA
    BOULDIN, CE
    PIANETTA, P
    SPICER, WE
    PHYSICAL REVIEW B, 1992, 46 (11): : 7276 - 7279
  • [40] Imaging performance study of the quantum X-ray scanner based on GaAs detectors
    Zat'ko, B.
    Dubecky, F.
    Scepko, P.
    Mudron, J.
    Stranovsky, I.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 576 (01): : 66 - 69