Doping with Niobium Nanoparticles as an Approach to Increase the Power Conversion Efficiency of P3HT:PCBM Polymer Solar Cells

被引:2
|
作者
Mkawi, Elmoiz Merghni [1 ,2 ]
Al-Hadeethi, Yas [1 ]
Arkook, Bassim [1 ]
Bekyarova, Elena [3 ]
机构
[1] King Abdulaziz Univ, Fac Sci, Dept Phys, Jeddah 21589, Saudi Arabia
[2] King Abdulaziz Univ, Ctr Nanotechnol, Jeddah 42806, Saudi Arabia
[3] Univ Calif Riverside, Dept Chem, Riverside, CA 92521 USA
关键词
P3HT; PCBM polymer; niobium (Nb) nanoparticles; solar cells; surface morphology; PERFORMANCE; FILMS;
D O I
10.3390/ma16062218
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Metal additive processing in polymer: fullerene bulk heterojunction systems is recognized as a viable way for improving polymer photovoltage performance. In this study, the effect of niobium (Nb) metal nanoparticles at concentrations of 2, 4, 6, and 8 mg/mL on poly(3-hexylthiophene-2,5-diyl) (P3HT)-6,6]-phenyl C61-butyric acid methyl ester (PCBM) blends was analyzed. The effect of Nb volume concentration on polymer crystallinity, optical properties, and surface structure of P3HT and PCBM, as well as the enhancement of the performance of P3HT:PC61BM solar cells, are investigated. Absorption of the P3HT:PC61BM mix is seen to have a high intensity and a red shift at 500 nm. The reduction in PL intensity with increasing Nb doping concentrations indicates an increase in PL quenching, suggesting that the domain size of P3HT or conjugation length increases. With a high Nb concentration, crystallinity, material composition, surface roughness, and phase separation are enhanced. Nb enhances PCBM's solubility in P3HT and decreases the size of amorphous P3HT domains. Based on the J-V characteristics and the optoelectronic study of the thin films, the improvement results from a decreased recombination current, changes in morphology and crystallinity, and an increase in the effective exciton lifespan. At high doping concentrations of Nb nanoparticles, the development of the short-circuit current (J(SC)) is associated with alterations in the crystalline structure of P3HT. The highest-performing glass/ITO/PEDOT:PSS/P3HT:PCBM:Nb/MoO3/Au structures have short-circuit current densities (J(SC)) of 16.86 mA/cm(2), open-circuit voltages (V-OC) of 466 mV, fill factors (FF) of 65.73%, and power conversion efficiency (mu) of 5.16%.
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页数:14
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