Memristor-based neural networks: a bridge from device to artificial intelligence

被引:70
作者
Cao, Zelin [1 ,2 ]
Sun, Bai [1 ]
Zhou, Guangdong [3 ]
Mao, Shuangsuo [4 ]
Zhu, Shouhui [5 ]
Zhang, Jie [6 ]
Ke, Chuan [6 ]
Zhao, Yong [4 ,5 ,6 ]
Shao, Jinyou [1 ]
机构
[1] Xi An Jiao Tong Univ, Frontier Inst Sci & Technol FIST, Xian 710049, Shaanxi, Peoples R China
[2] Xijing Univ, Shaanxi Int Joint Res Ctr Appl Technol Controllabl, Sch Sci, Xian 710123, Peoples R China
[3] Southwest Univ, Coll Artificial Intelligence, Brain Inspired Comp & Intelligent Control Chongqin, Chongqing 400715, Peoples R China
[4] Fujian Normal Univ, Fujian Prov Collaborat Innovat Ctr Adv High Field, Fuzhou 350117, Fujian, Peoples R China
[5] Southwest Jiaotong Univ, Sch Phys Sci & Technol, Key Lab Adv Technol Mat, Chengdu 610031, Sichuan, Peoples R China
[6] Southwest Jiaotong Univ, Sch Elect Engn, Chengdu 610031, Sichuan, Peoples R China
基金
国家重点研发计划;
关键词
CROSSBAR ARRAYS; SYNAPSE; PLASTICITY; INTERFACE; SIGNAL; FILMS;
D O I
10.1039/d2nh00536k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Since the beginning of the 21st century, there is no doubt that the importance of artificial intelligence has been highlighted in many fields, among which the memristor-based artificial neural network technology is expected to break through the limitation of von Neumann so as to realize the replication of the human brain by enabling strong parallel computing ability and efficient data processing and become an important way towards the next generation of artificial intelligence. A new type of nanodevice, namely memristor, which is based on the variability of its resistance value, not only has very important applications in nonvolatile information storage, but also presents obsessive progressiveness in highly integrated circuits, making it one of the most promising circuit components in the post-Moore era. In particular, memristors can effectively simulate neural synapses and build neural networks; thus, they can be applied for the preparation of various artificial intelligence systems. This study reviews the research progress of memristors in artificial neural networks in detail and highlights the structural advantages and frontier applications of neural networks based on memristors. Finally, some urgent problems and challenges in current research are summarized and corresponding solutions and future development trends are put forward.
引用
收藏
页码:716 / 745
页数:30
相关论文
共 189 条
  • [1] A bioinspired optoelectronically engineered artificial neurorobotics device with sensorimotor functionalities
    Akbari, Mohammad Karbalaei
    Zhuiykov, Serge
    [J]. NATURE COMMUNICATIONS, 2019, 10 (1)
  • [2] [Anonymous], 2018, IEEE MAGN LETT, DOI DOI 10.1109/LMAG.2018.2806893
  • [3] Photophysical, electrochemical and flexible organic resistive switching memory device application of a small molecule: 7,7-bis (hydroxyethylpiperazino) dicyanoquinodimethane
    Anwarhussaini, S. D.
    Battula, Himabindu
    Boppidi, Pavan Kumar Reddy
    Kundu, Souvik
    Chakraborty, Chanchal
    Jayanty, Subbalakshmi
    [J]. ORGANIC ELECTRONICS, 2020, 76
  • [4] Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure
    Baek, Sungpyo
    Yoo, Hyun Ho
    Ju, Jae Hyeok
    Sriboriboon, Panithan
    Singh, Prashant
    Niu, Jingjie
    Park, Jin-Hong
    Shin, Changhwan
    Kim, Yunseok
    Lee, Sungjoo
    [J]. ADVANCED SCIENCE, 2022, 9 (21)
  • [5] In Situ Synthesis of Two-Dimensional Lateral Semiconducting-Mo:Se//Metallic-Mo Junctions Using Controlled Diffusion of Se for High-Performance Large-Scaled Memristor
    Bala, Arindam
    So, Byungjun
    Pujar, Pavan
    Moon, Changgyun
    Kim, Sunkook
    [J]. ACS NANO, 2023, 17 (05) : 4296 - 4305
  • [6] Single cortical neurons as deep artificial neural networks
    Beniaguev, David
    Segev, Idan
    London, Michael
    [J]. NEURON, 2021, 109 (17) : 2727 - +
  • [7] CdSe Quantum Dot-Based Nanocomposites for Ultralow-Power Memristors
    Bera, Jayanta
    Betal, Atanu
    Sharma, Ashish
    Shankar, Uday
    Rath, Arup Kumar
    Sahu, Satyajit
    [J]. ACS APPLIED NANO MATERIALS, 2022, 5 (06) : 8502 - 8510
  • [8] Tuning the analog synaptic properties of forming free SiO2 memristors by material engineering
    Bousoulas, P.
    Sakellaropoulos, D.
    Tsoukalas, D.
    [J]. APPLIED PHYSICS LETTERS, 2021, 118 (14)
  • [9] Molecular ferroelectric/semiconductor interfacial memristors for artificial synapses
    Cai, Yichen
    Zhang, Jialong
    Yan, Mengge
    Jiang, Yizhou
    Jawad, Husnain
    Tian, Bobo
    Wang, Wenchong
    Zhan, Yiqiang
    Qin, Yajie
    Xiong, Shisheng
    Cong, Chunxiao
    Qiu, Zhi-Jun
    Duan, Chungang
    Liu, Ran
    Hu, Laigui
    [J]. NPJ FLEXIBLE ELECTRONICS, 2022, 6 (01)
  • [10] Nonvolatile Multistates Memories for High-Density Data Storage
    Cao, Qiang
    Lu, Weiming
    Wang, X. Renshaw
    Guan, Xinwei
    Wang, Lan
    Yan, Shishen
    Wu, Tom
    Wang, Xiaolin
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (38) : 42449 - 42471