Direct observation of kinetic characteristic on SnS-based self-powered photodetection

Chemically stable and earth-abundant SnS material recently has gained great attention in the electronics and optoelectronics applications since its modulated stoichiometry and structural-related semiconducting. In this work, a concept-of-proof photodetector based on a kind of multilayer SnS incorporated secondary phases synthesized by RF sputtering technology was demonstrated and characterized. Remarkably, the obvious negative self-powered photoresponse without external bias and polarity detection characterization at 2 V were observed, implying the photocurrent transformation kinetics from negative to positive with the variation of biased voltage. It reveals directly the underlying governing dynamics of the built-in synergizing biased electric field on the electron transport related light detection. It turns out a strong in-plane anisotropy detection performance with photoresponsivity of 0.3 A/W excited by near-infrared light. The presented results extend the understanding of interaction mechanism of built-in and external electric fields which signifies future lightweight, highperformance, and cost-effective next-generation self-powered detection applications.