Quasi-two-level method as an universal approach for voltage balancing of series-connected SiC MOSFETs

This study showcases the quasi -two -level (Q2L) control method for voltage balancing of series -connected SiC MOSFETs. Medium and high voltage applications require stacking of power semiconductor devices in cells or series -connection in order to reach appropriate blocking capabilities. The simplified quasi -two -level method, only to ensure balancing among the series -connected transistors can be deemed as a universal method for voltage balancing of stacked power devices or cells. A generalized control strategy and a more specific application for a medium voltage dc -dc converter are presented, with both validated using experimental models at up to 1.5 kV dc voltage.