Voltage-controlled magnetic anisotropy effect through a high-k MgO/ZrO2/MgO hybrid tunneling barrier

被引：1
作者：
Onoda, Hiroshige [1 ]
Nozaki, Tomohiro [1 ]
Nozaki, Takayuki [1 ]
Yuasa, Shinji [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Emerging Comp Technol, Tsukuba, Ibaraki 3058568, Japan
来源：
APPLIED PHYSICS EXPRESS | 2024年 / 17卷 / 02期
关键词：
voltage-controlled magnetic anisotropy; magnetoresistance; magnetic tunnel junction; High-k material; FIELD-INDUCED MODIFICATION; ATOMIC LAYERS;
D O I：
10.35848/1882-0786/ad2026
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the voltage-controlled magnetic anisotropy (VCMA) effect in epitaxial magnetic tunnel junctions (MTJs) with a hybrid MgO/ZrO2/MgO tunnel barrier. A metastable cubic ZrO2(001) thin film was successfully grown on a MgO(001) layer, leading to the high dielectric constant of 26.5. Using the hybrid tunneling barrier, we achieved the large VCMA coefficient of -350 fJ V(-1)m(-1), which is 70% larger than that observed in the magnetic tunnel junction with the single MgO barrier. Introduction of crystalline high-k dielectric tunneling barrier can open up new pathways to improving the VCMA properties in MTJs for voltage-driven spintronic devices.
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页数：5
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