Design Of A 220 GHz Fourth-harmonic Mixer Based On Schottky Diode

被引：0
|
作者：
Sun, Xuechun [1 ,2 ]
Yang, Penglin [1 ,2 ]
Zhou, Tianchi [1 ,2 ]
Yang, Jiahao [1 ,2 ]
Zhou, Hongji [1 ,2 ]
Liang, Jingrui [1 ,2 ]
Zhang, Jia [1 ,2 ]
Zhou, Jun [1 ,2 ]
Zhang, Yaxin [1 ,2 ]
Liang, Shixiong [3 ]
Wang, Wei [3 ]
机构：
[1] Univ Elect Sci & Technol China, Yangtze Delta Region Inst Huzhou, Huzhou Key Lab Terahertz Integrated Circuits & Sy, Huzhou 313001, Peoples R China
[2] Univ Elect Sci & Technol China, Chengdu 611731, Peoples R China
[3] Hebei Semicond Res Inst, Natl Key Lab Solid State Microwave Devices & Circ, Shijiangzhuang 050051, Peoples R China
来源：
2023 48TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, IRMMW-THZ | 2023年
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
D O I：
10.1109/IRMMW-THz57677.2023.10299200
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a 220 GHz fourth-harmonic mixer was designed based on Schottky diode. The structure of multistage reduced height waveguide has been used to expand the bandwidth. On the basis of the common sub-harmonic mixer, this mixer further reduces the required frequency of the LO source. According to the simulation results, the frequency range of RF is 200-240 GHz. When the IF is 1GHz, the conversion loss of single sideband (SSB) is better than 13 dB. In the range of 202-237 GHz, the conversion loss is better than 11.5 dB, and the best value is 10.66 dB.
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页数：2
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