Flexible Memristor-Based Nanoelectronic Devices for Wearable Applications: A Review

被引:24
作者
Rao, Zhaowei [1 ]
Wang, Xufei [2 ,3 ]
Mao, Shuangsuo [1 ]
Qin, Jiajia [1 ]
Yang, Yusheng [1 ]
Liu, Mingnan [1 ]
Ke, Chuan [3 ]
Zhao, Yong [1 ,3 ]
Sun, Bai [4 ]
机构
[1] Fujian Normal Univ, Coll Phys & Energy, Fujian Prov Collaborat Innovat Ctr Adv High Field, Fuzhou 350117, Fujian, Peoples R China
[2] Jinniu Dist Adm Examinat & Approval Bur Chengdu, Chengdu 610000, Sichuan, Peoples R China
[3] Southwest Jiaotong Univ, Superconduct & New Energy R&D Ctr, Key Lab Adv Technol Mat, Chengdu 610031, Sichuan, Peoples R China
[4] Xi An Jiao Tong Univ, Frontier Inst Sci & Technol FIST, Xian 710049, Shaanxi, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
flexible memristor; wearable electronics; electronicskin; neuromorphic computing; information processing; artificial intelligence; RESISTIVE SWITCHING MEMORY; CARBON QUANTUM DOTS; HIGH-PERFORMANCE; THIN-FILMS; FILAMENT GROWTH; MUSCOVITE MICA; LOW-POWER; PEROVSKITE; BEHAVIOR; TRANSPARENT;
D O I
10.1021/acsanm.3c03397
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In the high-tech and intelligent era of the 21st century, as one of the important electronic devices, wearable electronic products can effectively improve work efficiency and quality of life. Since memristors have broad application prospects in information storage, neural synapses, neural networks, neuromorphic computation, electronic skin (e-skin), and brain-like chips, the development of flexible electronic devices based on memristors has received extensive attention. However, the incompatibility between the flexible substrate and the functional layer, the performance degradation after repeated bending, and the instability of devices in the biological environment greatly limit the commercial application of flexible memristors. In this review, the characteristics and applications of different types of functional layer nanomaterial-based memristors are first analyzed, and the preparation and integration of the devices are discussed. Then the development bottleneck of flexible memristors is introduced, and corresponding solutions are proposed. Finally, we look forward to the development of intelligent flexible memristors and point out the direction for the development of wearable electronic products based on flexible memristors, which promotes research of flexible memristors in artificial intelligence.
引用
收藏
页码:18645 / 18669
页数:25
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