Comparative Analysis of n- and p-Type Ferroelectric Tunnel Junctions Through Understanding of Non-FE Resistance Switching

被引：9

作者：

Koo, Ryun-Han ^{[1
,2
]}

Shin, Wonjun ^{[1
,2
]}

Ryu, Sangwoo ^{[1
,2
]}

Lee, Kyungmin ^{[1
,2
]}

Park, Sung-Ho ^{[1
,2
]}

Im, Jiseong ^{[1
,2
]}

Ko, Jong-Hyun ^{[1
,2
]}

Kim, Jeong-Hyun ^{[1
,2
]}

Kwon, Dongseok ^{[1
,2
]}

Kim, Jae-Joon ^{[1
,2
]}

Kwon, Daewoong ^{[1
,2
,3
]}

Lee, Jong-Ho ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr ISRC, Seoul 08826, South Korea

[3] Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 10期

关键词：

Ferroelectric tunnel junction (FTJ); hafnium zirconium oxide (HfZrO); p-type Si; fatigue mechanisms; ELECTRORESISTANCE; TRANSISTORS; MECHANISMS; CONDUCTION; FILMS;

D O I：

10.1109/LED.2023.3305602

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We re-evaluate the performance of the p -type ferroelectric tunnel junction (FTJ(p)) by introducing a perspective that includes non-ferroelectric (FE) resistive switching (RS). Contrary to the previous studies that FTJ(p) exhibits significantly lower on-current density (J(on)) compared to the n -type FTJ (FTJ(n)) , our observations show that FTJ(p) exhibits comparable J(on) to FTJ(n), thus achieving a higher tunneling electroresistance (TER) ratio. By analyzing low-frequency noise and temperature dependence of the fatigue rate, we demonstrate that the non-FE RS causes the increase in the J(on) and TER ratio of FTJ(p). Furthermore, we discover a new advantage of FTJ(p): It exhibits lower read noise than FTJ(n) in the operating region governed by the FE RS.

引用

页码：1624 / 1627

页数：4

共 2 条

[1] Conduction Mechanisms of Metal-Ferroelectric- Insulator-Semiconductor Tunnel Junction on N- and P-Type Semiconductor
Chang, Pengying
Du, Gang
Kang, Jinfeng
Liu, Xiaoyan
IEEE ELECTRON DEVICE LETTERS, 2021, 42 (01) : 118 - 121
[2] Cu-ion-induced n- to p-type switching in organic thermoelectric polyazacycloalkane/carbon nanotubes
Hata, Shinichi
Nakata, Riku
Yasuda, Soichiro
Ihara, Hiroki
Du, Yukou
Shiraishi, Yukihide
Toshima, Naoki
MATERIALS ADVANCES, 2022, 3 (01): : 373 - 380

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