Extracting and Analyzing the S-Parameters of Vertical Interconnection Structures in 3D Glass Packaging

被引:8
作者
Liu, Jinxu [1 ,2 ]
Zhang, Jihua [1 ,2 ,3 ]
Gao, Libin [1 ,2 ]
Chen, Hongwei [1 ,2 ]
机构
[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China
[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China
[3] Chengdu Microtechnol Co Ltd, Chengdu 611731, Peoples R China
关键词
through-glass vias (TGVs); 3D glass packaging; vertical interconnection; transmission matrix (T-matrix);
D O I
10.3390/mi14040803
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In order to effectively employ through-glass vias (TGVs) for high-frequency software package design, it is crucial to accurately characterize the S-parameters of vertical interconnection structures in 3D glass packaging. A methodology is proposed for the extraction of precise S-parameters using the transmission matrix (T-matrix) to analyze and evaluate the insertion loss (IL) and reliability of TGV interconnections. The method presented herein enables the handling of a diverse range of vertical interconnections, encompassing micro-bumps, bond-wires, and a variety of pads. Additionally, a test structure for coplanar waveguide (CPW) TGVs is constructed, accompanied by a comprehensive description of the equations and measurement procedure employed. The outcomes of the investigation demonstrate a favorable concurrence between the simulated and measured results, with analyses and measurements conducted up to 40 GHz.
引用
收藏
页数:8
相关论文
共 15 条
  • [1] Chang YC, 2011, IEEE C ELECTR PERFOR, P219, DOI 10.1109/EPEPS.2011.6100231
  • [2] Chen L., 2021, CHINESE J ELECTRON, V21, P040101
  • [3] Ebefors T., 2013, P IEEE INT 3D SYSTEM, P1, DOI 10.1109/3DIC.2013.6702382
  • [4] 3D Interdigital Electrodes Dielectric Capacitor Array for Energy Storage Based on Through Glass Vias
    Fang, Zhen
    Gao, Libin
    Chen, Hongwei
    Deng, Bowen
    Jili, Xiaobing
    Li, Wenlei
    Liang, Tianpeng
    Qu, Sheng
    Chen, Yuzhe
    Liang, Kexin
    Zhang, Jihua
    [J]. ADVANCED MATERIALS TECHNOLOGIES, 2022, 7 (08)
  • [5] Fischer T., 2008, P 2008 12 IEEE WORKS, P1
  • [6] Electrical Modeling and Characterization of Through Silicon via for Three-Dimensional ICs
    Katti, Guruprasad
    Stucchi, Michele
    De Meyer, Kristin
    Dehaene, Wim
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (01) : 256 - 262
  • [7] Wideband Power/Ground Noise Suppression in Low-Loss Glass Interposers Using a Double-Sided Electromagnetic Bandgap Structure
    Kim, Youngwoo
    Park, Gapyeol
    Cho, Kyungjun
    Raj, Pulugurtha Markondeya
    Tummala, Rao R.
    Kim, Joungho
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2020, 68 (12) : 5055 - 5064
  • [8] Microwave characterization and modeling of high aspect ratio through-wafer interconnect vias in silicon substrates
    Leung, LLW
    Chen, KJ
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (08) : 2472 - 2480
  • [9] Wideband Analysis and Prolongation of Surrounding TGVs Shielding Structure in 3-D ICs
    Li, Wenlei
    Zhang, Jihua
    Gao, Libin
    Chen, Hongwei
    Fang, Zhen
    Cai, Xingzhou
    Li, Yong
    Jia, Weicong
    Guo, Huan
    [J]. IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2023, 33 (01): : 39 - 42
  • [10] High Frequency Characterization of Through Silicon Via Structure
    Mong, Khoo Yee
    Kee, Chua Eng
    Guan, Lim Teck
    Liu Enxiao
    [J]. 2009 11TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC 2009), 2009, : 536 - +