Anisotropic crystal orientations dependent mechanical properties and fracture mechanisms in zinc blende ZnTe nanowires

被引:2
作者
Islam, A. S. M. Jannatul [1 ]
Islam, Md. Sherajul [1 ]
Hasan, Md. Sayed [1 ]
Hosen, Kamal [2 ]
Akbar, Md. Shahadat [1 ]
Bhuiyan, Ashraful G. [1 ]
Park, Jeongwon [3 ,4 ]
机构
[1] Khulna Univ Engn &Technol, Dept Elect & Elect Engn, Khulna 9203, Bangladesh
[2] Univ Minnesota Twin Cities, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
[3] Univ Nevada, Dept Elect & Biomed Engn, Reno, NV 89557 USA
[4] Univ Ottawa, Sch Elect Engn & Comp Sci, Ottawa, ON K1N 165, Canada
关键词
OPTICAL-PROPERTIES; GROWTH; TEMPERATURE; BEHAVIOR;
D O I
10.1039/d3ra03825d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The orientations of crystal growth significantly affect the operating characteristics of elastic and inelastic deformation in semiconductor nanowires (NWs). This work uses molecular dynamics simulation to extensively investigate the orientation-dependent mechanical properties and fracture mechanisms of zinc blende ZnTe NWs. Three different crystal orientations, including [100], [110], and [111], coupled with temperatures (100 to 600 K) on the fracture stress and elastic modulus, are thoroughly studied. In comparison to the [110] and [100] orientations, the [111]-oriented ZnTe NW exhibits a high fracture stress. The percentage decrease in fracture strength exhibits a pronounced variation with increasing temperature, with the highest magnitude observed in the [100] direction and the lowest magnitude observed in the [110] direction. The elastic modulus dropped by the largest percentage in the [111] direction as compared to the [100] direction. Most notably, the [110]-directed ZnTe NW deforms unusually as the strain rate increases, making it more sensitive to strain rate than other orientations. The strong strain rate sensitivity results from the unusual short-range and long-range order crystals appearing due to dislocation slipping and partial twinning. Moreover, the {111} plane is the principal cleavage plane for all orientations, creating a dislocation slipping mechanism at room temperature. The {100} plane becomes active and acts as another fundamental cleavage plane at increasing temperatures. This in-depth analysis paves the way for advancing efficient and reliable ZnTe NWs-based nanodevices and nanomechanical systems.
引用
收藏
页码:22800 / 22813
页数:14
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