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Recent advances in silicon-based nanostructures for thermoelectric applications
被引:12
作者:
Gordillo, Jose Manuel Sojo
[1
]
Morata, Alex
[1
]
Sierra, Carolina Duque
[1
]
Salleras, Marc
[2
]
Fonseca, Luis
[2
]
Tarancon, Albert
[1
,3
]
机构:
[1] Catalonia Inst Energy Res IREC, Jardins Dones Negre 1, Sant Adria De Besos 08930, Barcelona, Spain
[2] CSIC, Inst Microelectron Barcelona, IMB CNM, C Tillers S-N,Campus UAB, Bellaterra 08193, Barcelona, Spain
[3] Catalan Inst Res & Adv Studies ICREA, Passeig Lluis Co 23, Barcelona 08010, Spain
关键词:
FIGURE-OF-MERITS;
THERMAL-CONDUCTIVITY;
TRANSPORT-PROPERTIES;
PHONON-SCATTERING;
ROOM-TEMPERATURE;
SIGE NANOWIRES;
PERFORMANCE;
BULK;
FILMS;
REDUCTION;
D O I:
10.1063/5.0134208
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
In this work, implementations of silicon-based thermoelectric nanomaterials are reviewed. Approaches ranging from nanostructured bulk-i.e., macroscopic materials presenting nanoscale features-to more complex low-dimensional materials are covered. These implementations take advantage of different phonon scattering mechanisms and eventual modifications of the electronic band-structure for the enhancement of the thermoelectric figure of merit. This work is focused on the recent advances in silicon and silicon-based thermoelectric nanomaterials of the last decade-at both the theoretical and experimental level-with the spotlight on the most recent works. Different nanostructures and their fabrication methods are detailed, while the thermoelectric performances and the feasibility of their integration into functional micro-harvester generators are compared and discussed. This Research Update first covers the advances in nanostructured bulk, such as nanometric-sized polycrystals or defect-induced materials. Subsequently, it reviews low-dimensional materials, namely, thin films and nanowires. Later, other complex structures based on nanoporosity, superlattices, or core-shell schemes are detailed. Finally, it is devoted to present examples of the successful implementation of nanostructured silicon into functional thermoelectric devices.
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页数:22
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