共 51 条
[51]
Zhang YP, 2019, NAT COMMUN, V10, DOI [10.1038/s41467-019-09005-3, 10.1038/s41467-019-13393-x, 10.1038/s41467-019-12196-4]
Photoinduced Crystallization of Sb2Se3 and Ge2Sb2Te5 Chalcogenide Films
被引：0
作者：
Lebedeva, Y. S.
[1
]
Smayev, M. P.
[2
]
Budagovsky, I. A.
[2
]
Fedyanina, M. E.
[1
]
Sinev, I. S.
[3
]
Kunkel, T. S.
[4
]
Romashkin, A. V.
[1
]
Smirnov, P. A.
[1
,2
]
Sherchenkov, A. A.
[1
]
Kozyukhin, S. A.
[5
,6
]
Lazarenko, P. I.
[1
]
机构：
[1] Natl Res Univ Elect Technol MIET, Zelenograd 124498, Russia
[2] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia
[3] ITMO Univ, St Petersburg 197101, Russia
[4] Moscow Inst Phys & Technol, Dolgoprudnyi 141701, Russia
[5] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia
[6] Natl Res Tomsk State Univ, Tomsk 634050, Russia
来源：
JOURNAL OF SURFACE INVESTIGATION
|
2023年
/
17卷
/
SUPPL 1期
基金：
俄罗斯科学基金会;
关键词：
chalcogenide films;
phase-change materials;
laser crystallization;
surface;
optical properties;
spectrophotometry;
ellipsometry;
atomic-force microscopy;
Raman spectroscopy;
PHASE-CHANGE MATERIALS;
OPTICAL-PROPERTIES;
THIN-FILMS;
NONVOLATILE;
TRANSITION;
KINETICS;
GAP;
D O I：
10.1134/S1027451023070297
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The photoinduced crystallization of thin amorphous films based on the binary compound Sb2Se3 and the ternary compound Ge2Sb2Te5 under continuous-wave laser irradiation is studied. The optical parameters of amorphous and crystalline films are analyzed by optical and atomic force microscopies, ellipsometry, spectrophotometry, and Raman spectroscopy. The crystallization temperatures, optical band gaps, Urbach-tail lengths, the activation energies of electrical conductivity, as well as the spectral dependences of the refractive indices and the extinction coefficients, are determined. The crystallized regions of Sb2Se3 are characterized by the more pronounced inhomogeneity of reflectivity (grain size) compared to crystalline regions of Ge2Sb2Te5 produced with the same laser-beam parameters. An analysis of the topography of crystallized films shows qualitative differences in the crystallite sizes. The distinctions may be related to differences in the mechanism of photoinduced crystallization. The Sb(2)Se(3 )compound has a higher optical band gap in comparison with Ge2Sb2Te5 and lower absorbance in the visible and near-infrared region, which can reduce the optical losses in the elements of silicon integrated optics based on the phase-change materials, as well as extend the range of possible application of phase-change materials for optical elements and nanophotonics devices.
引用
收藏
页码：S339 / S348
页数：10
相关论文